Substrate processing method

Abstract

A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

What is claimed is: 
     
         1 . A substrate processing method comprising:
 a chemical liquid supplying step of supplying a chemical liquid having a first temperature to a major surface of a substrate;   a rinse liquid supplying step of supplying, after the chemical liquid supplying step, a rinse liquid having a second temperature lower than the first temperature to the major surface of the substrate to rinse off a liquid remaining on the substrate; and   a reaction liquid supplying step of supplying, after the chemical liquid supplying step and before the rinse liquid supplying step, a reaction liquid, causing an exothermic reaction upon mixing with the chemical liquid and having a liquid temperature lower than the first temperature and not less than the second temperature, to the major surface of the substrate in a state where the chemical liquid supplied to the substrate in the chemical liquid supplying step remains on the substrate;   wherein the reaction liquid supplying step includes:
 a supply starting step of starting a supplying of the reaction liquid to the major surface of the substrate at an intermediate portion, between a central portion and a peripheral edge portion, in a state where an entire major surface of the substrate that is rotating is covered by the chemical liquid; and 
 a liquid landing position moving step of moving, 
   after the supply starting step, a liquid landing position of the reaction liquid with respect to the major surface of the substrate only between the central portion and the intermediate portion such that the liquid landing position of the reaction liquid with respect to the major surface of the substrate moves from the intermediate portion to the central portion in a state where the entire major surface of the substrate that is rotating is covered by the chemical liquid and the reaction liquid.   
     
     
         2 . The substrate processing method according to  claim 1 , wherein the reaction liquid supplying step includes a step of discharging the reaction liquid in a discharge direction that is inclined with respect to the major surface of the substrate. 
     
     
         3 . The substrate processing method according to  claim 2 , wherein the reaction liquid supplying step includes a step of discharging the reaction liquid in the discharge direction that is inclined with respect to the major surface of the substrate so as to be positioned closer to a center of the substrate as the discharge direction approaches the major surface of the substrate. 
     
     
         4 . The substrate processing method according to  claim 1 , wherein the chemical liquid supplied to the substrate in the chemical liquid supplying step is a mixed liquid of a reaction chemical liquid having a liquid temperature lower than the first temperature and not less than the second temperature and a heat generating chemical liquid that generates heat upon mixing with the reaction chemical liquid, and
 the reaction liquid supplying step includes a step of supplying the reaction chemical liquid as the reaction liquid to the major surface of the substrate.   
     
     
         5 . The substrate processing method according to  claim 1 , wherein the reaction liquid supplying step includes a step of discharging the reaction liquid toward the major surface of the substrate in a state where the substrate is rotating at a rotation speed that is higher than a rotation speed of the substrate in at least a portion of a period between a start of supplying of the chemical liquid to the substrate and a start of supplying of the reaction liquid to the substrate. 
     
     
         6 . The substrate processing method according to  claim 1 , wherein the reaction liquid supplying step includes a step of discharging the reaction liquid simultaneously toward the central portion, the intermediate portion, and the peripheral edge portion of the major surface of the substrate in the state where the substrate is rotating. 
     
     
         7 . The substrate processing method according to  claim 1 , wherein the reaction liquid supplying step includes a step of making the reaction liquid land simultaneously on an entirety of a region, which is within the major surface of the substrate and includes a radius of the substrate, in the state where the substrate is rotating. 
     
     
         8 . A substrate processing apparatus comprising:
 a substrate holding unit holding and rotating a substrate;   a chemical liquid supplying unit discharging a chemical liquid having a first temperature toward a major surface of the substrate held by the substrate holding unit;   a rinse liquid supplying unit discharging a rinse liquid having a second temperature lower than the first temperature toward the major surface of the substrate held by the substrate holding unit;   a reaction liquid supplying unit discharging a reaction liquid, having a liquid temperature lower than the first temperature and not less than the second temperature and causing an exothermic reaction upon mixing with the chemical liquid, toward the major surface of the substrate held by the substrate holding unit; and   a controller controlling the substrate holding unit, the chemical liquid supplying unit, the rinse liquid supplying unit, and the reaction liquid supplying unit;   wherein the controller executes   a chemical liquid supplying step of supplying the chemical liquid having the first temperature to the major surface of the substrate;   a rinse liquid supplying step of supplying, after the chemical liquid supplying step, the rinse liquid having the second temperature to the major surface of the substrate to rinse off a liquid remaining on the substrate; and   a reaction liquid supplying step of supplying, after the chemical liquid supplying step and before the rinse liquid supplying step, the reaction liquid of the liquid temperature lower than the first temperature and not less than the second temperature to the major surface of the substrate in a state where the chemical liquid supplied to the substrate in the chemical liquid supplying step remains on the substrate; and   wherein the reaction liquid supplying step includes:
 a supply starting step of starting a supplying of the reaction liquid to the major surface of the substrate at an intermediate portion, between a central portion and a peripheral edge portion, in a state where an entire major surface of the substrate that is rotating is covered by the chemical liquid; and 
 a liquid landing position moving step of moving, after the supply starting step, a liquid landing position of the reaction liquid with respect to the major surface of the substrate only between the central portion and the intermediate portion such that the liquid landing position of the reaction liquid with respect to the major surface of the substrate moves from the intermediate portion to the central portion in a state where the entire major surface of the substrate that is rotating is covered by the chemical liquid and the reaction liquid.