US2016233268A1PendingUtilityA1

Manufacturing method of photoelectric conversion apparatus

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Assignee: SEIKO EPSON CORPPriority: Feb 28, 2014Filed: Apr 18, 2016Published: Aug 11, 2016
Est. expiryFeb 28, 2034(~7.6 yrs left)· nominal 20-yr term from priority
Inventors:Hiroaki Jiroku
H10F 77/206H10F 77/126H10F 71/00H10F 39/8057H10F 39/8037H10F 39/805H10F 39/803H10F 39/026H10F 39/024H10F 39/18H10F 39/016H10F 39/014H10F 39/022H01L 27/14689H01L 27/14696Y02P70/50Y02E10/541
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Claims

Abstract

A method of manufacturing a photoelectric conversion apparatus includes forming a switching element on one surface of a substrate, forming an interlayer insulation film so as to cover the switching element, forming a shading film on the interlayer insulation film in an area overlapping the switching element when seen from a film thickness direction of the substrate, forming a lower electrode on the interlayer insulation film, and forming a semiconductor film having a chalcopyrite structure on the lower electrode. A group 16 element is included in the semiconductor film, and in forming the semiconductor film, the shading film and the lower electrode are caused to react to the group 16 element to form a shading film including the group 16 element and a lower electrode including the group 16 element.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of manufacturing a photoelectric conversion apparatus, comprising:
 forming a switching element on one surface of a substrate;   forming an interlayer insulation film so as to cover the switching element;   forming a shading film on the interlayer insulation film in an area overlapping the switching element when seen from a film thickness direction of the substrate;   forming a lower electrode on the interlayer insulation film; and   forming a semiconductor film having a chalcopyrite structure on the lower electrode,   wherein a group 16 element is included in the semiconductor film, and   in forming the semiconductor film, the shading film and the lower electrode are caused to react to the group 16 element to form a shading film including the group 16 element and a lower electrode including the group 16 element.   
     
     
         2 . The method of manufacturing a photoelectric conversion apparatus according to  claim 1 , wherein
 the group 16 element includes at least one of selenium and sulfur.   
     
     
         3 . The method of manufacturing a photoelectric conversion apparatus according to  claim 2 , wherein
 the shading film and the lower electrode include molybdenum.

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