Method for fabricating semiconductor package

Abstract

A method for fabricating a semiconductor package is provided, which includes the steps of: providing a first substrate having a plurality of first conductive posts on a surface thereof and providing a second substrate having a third surface having a chip disposed thereon and a fourth surface opposite to the third surface; disposing the first substrate on the third surface of the second substrate through the first conductive posts; forming an encapsulant between the first substrate and the second substrate, wherein the encapsulant has a first surface adjacent to the first substrate and a second surface opposite to the first surface; and removing the first substrate, thereby effectively preventing solder bridging from occurring.

1 . A method for fabricating a semiconductor package, comprising the steps of:
 providing a first substrate having a plurality of first conductive posts on a surface thereof and a second substrate having a third surface having a chip disposed thereon and a fourth surface opposite to the third surface, and disposing the first substrate on the third surface of the second substrate through the first conductive posts;   forming an encapsulant between the first substrate and the second substrate, wherein the encapsulant has a first surface adjacent to the first substrate and a second surface opposite to the first surface; and   removing the first substrate.   
     
     
         2 . The method of  claim 1 , wherein the third surface of the second substrate further has a plurality of conductive pads that are correspondingly electrically connected to the first conductive posts so as for the first substrate to be disposed on the second substrate. 
     
     
         3 . The method of  claim 2 , wherein a plurality of second conductive posts are further formed on the conductive pads and correspondingly electrically connected to the first conductive posts. 
     
     
         4 . The method of  claim 3 , wherein a plurality of conductive elements are further formed on top ends of the second conductive posts. 
     
     
         5 . The method of  claim 1 , wherein a plurality of conductive elements are further formed on top ends of the first conductive posts. 
     
     
         6 . The method of  claim 1 , wherein the first substrate has a dielectric layer, a first metal layer and a second metal layer sequentially stacked, and the first conductive posts are formed on the second metal layer. 
     
     
         7 . The method of  claim 6 , wherein removing the first substrate comprises removing the dielectric layer and the first metal layer first and then removing the second metal layer. 
     
     
         8 . The method of  claim 1 , after removing the first substrate, further comprising forming an OSP (Organic Solderability Preservative) layer on the first conductive posts. 
     
     
         9 . The method of  claim 1 , after removing the first substrate, further comprising forming a plurality of conductive elements on the fourth surface of the second substrate. 
     
     
         10 . The method of  claim 1 , wherein the second substrate has a first carrier and an adhesive layer sequentially stacked such that the first substrate is disposed on the second substrate with the first conductive posts attached to the adhesive layer, and after the first substrate is removed, the method further comprises removing the second substrate so as to form a second redistribution layer on the second surface of the encapsulant. 
     
     
         11 . The method of  claim 10 , after forming the second redistribution layer, further comprising forming a plurality of conductive elements on the second redistribution layer. 
     
     
         12 . The method of  claim 1 , after removing the first substrate, further comprising forming a first redistribution layer on the first surface of the encapsulant. 
     
     
         13 . The method of  claim 12 , after forming the first redistribution layer, further comprising: disposing a second carrier on the first redistribution layer and removing the second substrate so as to form a second redistribution layer on the second surface of the encapsulant; and removing the second carrier. 
     
     
         14 - 15 . (canceled)