Slot designs in wide metal lines

Abstract

A method and structure for slots in wide lines to reduce stress. An example embodiment method and structure for is an interconnect structure comprising: interconnect comprising a wide line. The wide line has a first slot. The first slot is spaced a first distance from a via plug so that the first slot relieves stress on the wide line and the via plug. The via plug can contact the wide line from above or below. Another example embodiment is a dual damascene interconnect structure comprising: an dual damascene shaped interconnect comprising a via plug, a first slot and a wide line. The wide line has the first slot. The first slot is spaced a first distance from the via plug so that the first slot relieves stress on the wide line and the via plug.

What is claimed is: 
     
         1 . A device comprising:
 a substrate;   a dielectric layer disposed over the substrate, wherein the dielectric layer corresponds to an interconnect level of the device; and   a continuous conductive line disposed in a trench in the dielectric layer, wherein the continuous conductive line surrounds at least one dielectric structure within the continuous conductive line, the dielectric structure partially interrupts the continuous conductive line, wherein the dielectric structure is positioned in a portion of the continuous conductive line which has a via plug in communication therewith.   
     
     
         2 . The device of  claim 1  wherein the dielectric structure is of a sufficient dimension to reduce stress related defects in the continuous conductive line and the via plug in a via level which is in communication with the continuous conductive line in proximity of the dielectric structure. 
     
     
         3 . The device of  claim 1  wherein:
 the dielectric structure is of sufficient size to reduce stress related defects in the continuous conductive line and the via plug in a via level in communication with the continuous conductive line in proximity of the dielectric structure; and 
 the continuous conductive line comprises copper. 
 
     
     
         4 . The device of  claim 1  wherein the continuous conductive line comprises a plurality of dielectric structures therein, the dielectric structures are of sufficient size to reduce stress related defects in the continuous conductive line and the via plug in communication with the continuous conductive line in proximity of the dielectric structures. 
     
     
         5 . The device of  claim 4  wherein:
 the via plug is located at a bottom surface or a top surface of the continuous conductive line; and 
 the continuous conductive line containing the dielectric structures comprises a wide conductive line and the via plug is in communication with a narrow conductive line. 
 
     
     
         6 . The device of  claim 4  wherein the dielectric structures are disposed completely within the trench such that the dielectric structures form dielectric islands within the continuous conductive line. 
     
     
         7 . The device of  claim 1  wherein:
 the continuous conductive line comprises a plurality of dielectric structures therein, the dielectric structures are of sufficient size to reduce stress related defects in the continuous conductive line and the via plug in communication with the continuous conductive line in proximity of the dielectric structures; and 
 the continuous conductive line comprises copper. 
 
     
     
         8 . The device of  claim 7  wherein:
 the via plug is located on a bottom surface or a top surface of the continuous conductive line; and 
 the continuous conductive line containing the dielectric structures comprises a wide conductive line and the via plug is in communication with a narrow conductive line. 
 
     
     
         9 . A device comprising:
 a substrate;   a dielectric layer disposed on the substrate; and   a continuous conductive line disposed in a trench in the dielectric layer corresponding to the continuous conductive line, wherein the continuous conductive line surrounds at least one dielectric structure disposed in a portion of the trench, wherein the dielectric structure creates a partial discontinuity within the continuous conductive line, the dielectric structure is disposed within a distance from a via plug in a via level which is in communication with the continuous conductive line.   
     
     
         10 . The device of  claim 9  wherein a minimum distance away from the via plug is between about 0.05 μm and 0.12 μm and a maximum distance between the dielectric structure and the via plug is between about 0.855 μm and 1.205 μm. 
     
     
         11 . The device of  claim 9  wherein the dielectric structure is of a sufficient size to reduce stress related defects in the continuous conductive line and the via plug. 
     
     
         12 . The device of  claim 11  wherein the dielectric structure comprises:
 a width between about 135 and 315% of an effective diameter of the via plug; and 
 a total length between about 265 and 1380% of the effective diameter of the via plug. 
 
     
     
         13 . The device of  9  wherein the continuous conductive line comprises a plurality of dielectric structures disposed in the trench and discontinuously surround the via plug. 
     
     
         14 . The device of  claim 13  wherein the dielectric structures form a plurality of geometrically discontinuous concentric rows of structures in the continuous conductive line around the via plug. 
     
     
         15 . The device of  claim 14  wherein:
 a minimum distance between the dielectric structures and the via plug is about 26 and 63% of an effective diameter/width of the via plug; and 
 a maximum distance bwteeen the dielectric structures and the via plug is between 0.855 μm and 2.055 μm. 
 
     
     
         16 . A device comprising:
 a substrate;   a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a trench corresponding to a continuous conductive line, wherein the trench includes at least one dielectric structure;   a continuous conductive line disposed in the trench of the dielectric layer, wherein the continuous conductive line surrounds the at least one dielectric structure, wherein the dielectric structure creates a partial discontinuity within the continuous conductive line, the dielectric structure is disposed in a portion of the trench that is proximal to the continuous conductive line which has a via plug in communication therewith.   
     
     
         17 . The device of  claim 16  wherein:
 the via plug is located on a bottom surface or a top surface of the continuous conductive line; and 
 the continuous conductive line containing the dielectric structure comprises a wide conductive line and the via plug is in communication with a narrow conductive line. 
 
     
     
         18 . The device of  claim 17  wherein the dielectric structure is of a sufficient dimension to reduce stress related defects in the continuous conductive line and the via plug in a via level which is in communication with the continuous conductive line in proximity of the dielectric structure. 
     
     
         19 . The device of  claim 17  wherein the continuous conductive line comprises a plurality of dielectric structures therein, the dielectric structures are of sufficient size to reduce stress related defects in the continuous conductive line and the via plug in communication with the continuous conductive line in proximity of the dielectric structures. 
     
     
         20 . The device of  claim 19  wherein the dielectric structures comprise a geometric shape including rectangular shape, L-shape, curve shape or a combination thereof.