Retainer ring, polishing apparatus, and manufacturing method of semiconductor device

Abstract

In accordance with an embodiment, a polishing apparatus includes a polishing table and a polishing head. A retainer ring is attached to a surface of the polishing head. The surface of the polishing head faces the polishing table. The retainer ring includes a ceramic material. The fracture toughness of the ceramic material is 4 MPa·m 1/2 or more.

1 . A retainer ring comprising:
 a ceramic material, the fracture toughness of the ceramic material being 4 MPa·m 1/2  or more.   
     
     
         2 . The retainer ring of  claim 1 ,
 wherein the Young's modulus of the ceramic material is 400 GPa or less.   
     
     
         3 . The retainer ring of  claim 1 ,
 wherein the ceramic material comprises at least one of substances selected from the group consisting of zirconia (ZrO 2 ), alumina (Al 2 O 3 ), silicon carbide (SiC), silicon nitride (SiN), yttria (Y 2 O 3 ), and cordierite (2MgO·2Al 2 O 3 ·5SiO 2 ).   
     
     
         4 . A polishing apparatus comprising:
 a polishing table; and   a polishing head with a retainer ring attached to a surface of the polishing head facing the polishing table,   wherein the retainer ring comprises a ceramic material, and   the fracture toughness of the ceramic material is  4  MPa , m 1 / 2  or more.   
     
     
         5 . The apparatus of  claim 4 ,
 wherein the Young's modulus of the ceramic material is 400 GPa or less.   
     
     
         6 . The apparatus of  claim 4 ,
 wherein the ceramic material comprises at least one of substances selected from the group consisting of zirconia (ZrO 2 ), alumina (Al 2 O 3 ), silicon carbide (SiC), silicon nitride (SiN), yttria (Y 2 O 3 ), and cordierite (2MgO·2Al 2 O 3 5SiO 2 ).   
     
     
         7 . A manufacturing method of a semiconductor device, the method comprising
 rotating a polishing table to which a polishing pad is attached, and rotating a substrate held by a retainer ring attached to a polishing head while pressing the substrate to the polishing pad, thereby polishing the substrate,   wherein the retainer ring comprises a ceramic material, and   the fracture toughness of the ceramic material is 4 MPa·m 1/2  or more.   
     
     
         8 . The apparatus of  claim 4 ,
 wherein the Young's modulus of the ceramic material is 400 GPa or less.   
     
     
         9 . The apparatus of  claim 4 ,
 wherein the ceramic material comprises at least one of substances selected from the group consisting of zirconia (ZrO 2 ), alumina (Al 2 O 3 ), silicon carbide (SiC), silicon nitride (SiN), yttria (Y 2 O 3 ), and cordierite (2MgO·2Al 2 O 3 ·5SiO 2 ).