US2016225908A1PendingUtilityA1

Semiconductor device

59
Assignee: SEMICONDUCTOR ENERGY LABPriority: Apr 2, 2010Filed: Apr 12, 2016Published: Aug 4, 2016
Est. expiryApr 2, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Inventors:Shunpei Yamazaki
H10D 30/6739H10D 30/6758H10D 86/60H10D 30/6755H10D 86/423H10D 86/421H10D 30/6756H10D 30/6704H10D 30/67H01L 29/7869H01L 27/1225
59
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Claims

Abstract

An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.

Claims

exact text as granted — not AI-modified
1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a first metal oxide film over a substrate;   an oxide semiconductor film in contact with the first metal oxide film;   a second metal oxide film in contact with the oxide semiconductor film; and   a gate electrode over the second metal oxide film,   wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein each of the first metal oxide film and the second metal oxide film comprises a constituent element of the oxide semiconductor film. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein each of the first metal oxide film and the second metal oxide film comprises gallium. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein a proportion of a constituent element of the first metal oxide film is equal to a proportion of a constituent element of the second metal oxide film. 
     
     
         6 . The semiconductor device according to  claim 2 , wherein an energy gap of each of the first metal oxide film and the second metal oxide film is larger than an energy gap of the oxide semiconductor film. 
     
     
         7 . The semiconductor device according to  claim 2 , wherein a side surface of the oxide semiconductor film is in contact with the second metal oxide film in a channel width direction. 
     
     
         8 . The semiconductor device according to  claim 2 , wherein the first metal oxide film is in contact with the second metal oxide film in a channel width direction. 
     
     
         9 . A semiconductor device comprising:
 a first metal oxide film over a substrate;   an oxide semiconductor film in contact with the first metal oxide film;   source and drain electrodes in contact with the oxide semiconductor film;   a second metal oxide film in contact with the oxide semiconductor film;   a gate insulating film over the second metal oxide film; and   a gate electrode over the gate insulating film,   wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.   
     
     
         10 . The semiconductor device according to  claim 9 , wherein each of the first metal oxide film and the second metal oxide film comprises a constituent element of the oxide semiconductor film. 
     
     
         11 . The semiconductor device according to  claim 9 , wherein each of the first metal oxide film and the second metal oxide film comprises gallium. 
     
     
         12 . The semiconductor device according to  claim 9 , wherein a proportion of a constituent element of the first metal oxide film is equal to a proportion of a constituent element of the second metal oxide film. 
     
     
         13 . The semiconductor device according to  claim 9 , wherein an energy gap of each of the first metal oxide film and the second metal oxide film is larger than an energy gap of the oxide semiconductor film. 
     
     
         14 . The semiconductor device according to  claim 9 , wherein a side surface of the oxide semiconductor film is in contact with the second metal oxide film in a channel width direction. 
     
     
         15 . The semiconductor device according to  claim 9 , wherein the first metal oxide film is in contact with the second metal oxide film in a channel width direction.

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