Semiconductor package using a polymer substrate

Abstract

A semiconductor package using a polymer substrate is disclosed and may include a polymer cavity structure comprising first metal traces, a micro-electro mechanical systems (MEMS) device and a semiconductor die bonded to a first surface within a cavity of the cavity structure, and a substrate coupled to the cavity structure and comprising second metal traces coupled to the first metal traces. The substrate may enclose the MEMS device and the semiconductor die. Ground traces may be on external surfaces of the polymer cavity structure. Ball lands may be on a surface of the substrate opposite to a surface with the second metal traces. The first metal traces may extend from the first surface of the polymer cavity structure up a sidewall of the cavity and to conductive patterns on a top surface of the polymer cavity structure.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a polymer substrate comprising first metal traces on a first surface of the polymer substrate;   a micro-electro mechanical systems (MEMS) device and a semiconductor die bonded to the first surface, the semiconductor die electrically coupled to at least one of the first metal traces;   a polymer cavity substrate coupled to the first surface of the polymer substrate and encircling the MEMS device and the semiconductor die, the polymer cavity substrate comprising second metal traces electrically coupled to at least a subset of the first metal traces; and   a third substrate coupled to the cavity substrate and comprising third metal traces coupled to the second metal traces.   
     
     
         2 . The semiconductor device according to  claim 1 , comprising a ground trace on an outer surface of the polymer cavity substrate. 
     
     
         3 . The semiconductor device according to  claim 1 , comprising ball lands on a surface of the third substrate opposite to a surface with the third metal traces. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the second metal traces extend from the first metal traces up a sidewall of the polymer cavity substrate and to a top surface of the polymer cavity substrate. 
     
     
         5 . The semiconductor device according to  claim 4 , wherein the second metal traces are coupled to conductive patterns on the top surface of the polymer cavity substrate. 
     
     
         6 . The semiconductor device according to  claim 1 , comprising a ground trace on an inside surface of the polymer cavity substrate. 
     
     
         7 . The semiconductor device according to  claim 1 , comprising wire bonds that electrically couple the semiconductor die to the first metal traces. 
     
     
         8 . The semiconductor device according to  claim 1 , comprising wire bonds that electrically couple the MEMS device to the semiconductor die. 
     
     
         9 . The semiconductor device according to  claim 1 , wherein the polymer cavity substrate comprises a ground shield layer that is electrically coupled to one or more of the third metal traces in the third substrate. 
     
     
         10 . A semiconductor device comprising:
 a polymer cavity structure comprising first metal traces;   a micro-electro mechanical systems (MEMS) device and a semiconductor die bonded to a first surface within a cavity of the polymer cavity structure; and   a substrate coupled to the polymer cavity structure and comprising second metal traces coupled to the first metal traces.   
     
     
         11 . The semiconductor device of  claim 10 , wherein the substrate encloses the MEMS device and the semiconductor die within the cavity. 
     
     
         12 . The semiconductor device of  claim 10 , comprising ground traces on external surfaces of the polymer cavity structure. 
     
     
         13 . The semiconductor device of  claim 10 , comprising ball lands on a surface of the substrate opposite to a surface with the second metal traces. 
     
     
         14 . The semiconductor device of  claim 10 , wherein the first metal traces extend from the first surface of the polymer cavity structure up a sidewall of the cavity and to a top surface of the polymer cavity structure. 
     
     
         15 . The semiconductor device of  claim 14 , wherein the first metal traces are coupled to conductive patterns on the top surface of the polymer cavity structure. 
     
     
         16 . The semiconductor device of  claim 10 , comprising a ground trace on an inside surface of the cavity of the polymer cavity structure. 
     
     
         17 . The semiconductor device of  claim 10 , comprising wire bonds that electrically couple the semiconductor die to the first metal traces. 
     
     
         18 . The semiconductor device of  claim 10 , comprising a polymer lid coupled to a second surface of the polymer cavity structure, wherein the polymer lid comprises an orifice corresponding to a position of the MEMS device bonded to the first surface of the polymer cavity structure. 
     
     
         19 . The semiconductor device of  claim 10 , comprising wire bonds that electrically couple the MEMS device to the semiconductor die. 
     
     
         20 . A method of fabricating a semiconductor device, the method comprising:
 coupling a polymer cavity structure comprising first metal traces to a first substrate; and   coupling a micro-electro mechanical systems (MEMS) device and a semiconductor die to a first surface within a cavity of the polymer cavity structure;   coupling a second substrate to the polymer cavity structure, wherein the second substrate comprises second metal traces coupled to the first metal traces.