Process for assembling two wafers and corresponding device

Abstract

A process for assembling a first wafer and a second wafer each bevelled on their peripheries includes excavating the bevelled peripheral part of at least one first side of the first wafer to create a deposit bordering the region excavated in the material of the first wafer. The first side and a second side of the second wafer are then bonded together.

1 - 15 . (canceled) 
     
     
         16 . A device comprising:
 a first wafer bevelled on its periphery and having a first side;   a second wafer bevelled on its periphery and having a second side coupled to the first side of said first wafer; and   said first wafer having an excavated region in the bevelled periphery on the first side thereof, and comprising a border adjacent the excavated region that is formed by material from the excavated region and that extends in height above the first side of said first wafer and contacts the bevelled periphery on the second side of said second wafer.   
     
     
         17 . The device according to  claim 16 , wherein at least one of said first and second wafers further comprises a bonding layer at an interface between the second side of said second wafer and the first side of said first wafer. 
     
     
         18 . The device according to  claim 17 , wherein the bonding layer comprises at least one of an oxide and a nitride. 
     
     
         19 . The device according to  claim 16 , further comprising a direct bonding interface between the second side of said second wafer and the first side of said first wafer. 
     
     
         20 . The device according to  claim 16 , wherein said first and second wafers have different thicknesses. 
     
     
         21 . The device according to  claim 16 , wherein each of said first and second wafers comprises a semiconductor material. 
     
     
         22 . The device according to  claim 21 , wherein said semiconductor material comprises silicon. 
     
     
         23 . The device according to  claim 16 , wherein each of said first and second wafers comprises glass. 
     
     
         24 . The device according to  claim 16 , wherein said first and second wafers comprise different materials. 
     
     
         25 . A device comprising:
 a first semiconductor wafer bevelled on its periphery and having a first side;   a second semiconductor wafer bevelled on its periphery and having a second side coupled to the first side of said first semiconductor wafer; and   said first semiconductor wafer having an excavated region in the bevelled periphery on the first side thereof, and comprising a border adjacent the excavated region that extends in height above the first side of said first semiconductor wafer and contacts the bevelled periphery on the second side of said second semiconductor wafer.   
     
     
         26 . The device according to  claim 25 , wherein at least one of said first and second semiconductor wafers further comprises a bonding layer at an interface between the second side of said second wafer and the first side of said first wafer. 
     
     
         27 . The device according to  claim 26 , wherein the bonding layer comprises at least one of an oxide and a nitride. 
     
     
         28 . The device according to  claim 25 , further comprising a direct bonding interface between the second side of said second semiconductor wafer and the first side of said first semiconductor wafer. 
     
     
         29 . The device according to  claim 25 , wherein said first and second semiconductor wafers have different thicknesses. 
     
     
         30 . The device according to  claim 25 , wherein each of said first and second semiconductor wafers comprises silicon. 
     
     
         31 . A device comprising:
 a first wafer bevelled on its periphery and having a first side;   a second wafer bevelled on its periphery and having a second side coupled to the first side of said first wafer, said second wafer have a thickness different that a thickness of said first wafer; and   said first wafer having an excavated region in the bevelled periphery on the first side thereof, and comprising a border adjacent the excavated region that extends in height above the first side of said first wafer and contacts the bevelled periphery on the second side of said second wafer.   
     
     
         32 . The device according to  claim 31 , wherein at least one of said first and second wafers further comprises a bonding layer at an interface between the second side of said second wafer and the first side of said first wafer. 
     
     
         33 . The device according to  claim 32 , wherein the bonding layer comprises at least one of an oxide and a nitride. 
     
     
         34 . The device according to  claim 31 , further comprising a direct bonding interface between the second side of said second wafer and the first side of said first wafer. 
     
     
         35 . The device according to  claim 31 , wherein each of said first and second wafers comprises a semiconductor material. 
     
     
         36 . The device according to  claim 35 , wherein said semiconductor material comprises silicon. 
     
     
         37 . The device according to  claim 31 , wherein each of said first and second wafers comprises glass. 
     
     
         38 . The device according to  claim 31 , wherein said first and second wafers comprise different materials.