US2016217981A1PendingUtilityA1
Semiconductor system assemblies and methods of operation
Est. expiryDec 17, 2033(~7.4 yrs left)· nominal 20-yr term from priority
Inventors:Andrew NguyenKartik RamaswamySrinivas D. NemaniBradley J. HowardYogananda Sarode Vishwanath
H10P 50/287H10P 50/283H10P 50/267H10P 72/0421H10P 50/242H01J 37/32807H01J 37/32568H01J 37/32449H01J 37/32357H01J 2237/334H01J 37/32091H01J 37/32495H01J 37/32532H01J 37/3244H01L 21/67069
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Claims
Abstract
An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.
Claims
exact text as granted — not AI-modified1 . A semiconductor processing system comprising:
an inlet assembly comprising:
a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port, and
a mounting assembly comprising a gas block coupled upstream with the precursor distribution assembly, and a mounting block coupled downstream with the precursor distribution assembly.
2 . The semiconductor processing system of claim 1 , wherein a remote plasma unit is coupled upstream of the gas block.
3 . The semiconductor processing system of claim 1 , wherein the mounting block is coupled with a semiconductor processing chamber top plate.
4 . The semiconductor processing system of claim 1 , wherein the mounting block defines a channel, and includes a first mounting surface and a second mounting surface opposite the first mounting surface.
5 . The semiconductor processing system of claim 4 , wherein a first section of the channel extending from the first mounting surface is characterized by a first diameter.
6 . The semiconductor processing system of claim 5 , wherein a second section of the channel extending from the first section of the channel to the second mounting surface is characterized by an increasing diameter at least partially along the first section of the channel towards the second mounting surface.
7 . The semiconductor processing system of claim 1 , wherein the gas block is coupled with a first surface of the precursor distribution assembly and the mounting block is coupled with a second surface of the precursor distribution assembly opposite the first surface of the precursor distribution assembly.
8 . The semiconductor processing system of claim 1 , wherein the precursor distribution assembly comprises an annular shape.
9 . The semiconductor processing system of claim 1 , wherein the precursor distribution assembly comprises at least two coupled plates, which at least partially define the plurality of distribution channels.
10 . The semiconductor processing system of claim 9 , wherein a first plate of the at least two coupled plates at least partially defines a first distribution channel extending tangentially from the single injection port to at least two secondary distribution channels.
11 . The semiconductor processing system of claim 10 , wherein the at least two secondary distribution channels extend tangentially from the first distribution channel to at least two tertiary distribution apertures.
12 . The semiconductor processing system of claim 11 , wherein a second plate of the at least two coupled plates at least partially defines a portion of the at least two tertiary distribution apertures, and wherein the second plate further defines at least two tertiary distribution channels extending from the at least two tertiary distribution apertures.
13 . The semiconductor processing system of claim 12 , wherein the second plate further defines at least two quaternary distribution channels extending from the at least two tertiary distribution channels.
14 . A semiconductor processing system comprising:
an inlet assembly comprising:
a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with a single injection port, wherein the precursor distribution assembly comprises at least two annular plates coupled with each other and at least partially defining a central distribution channel, and wherein the injection port extends perpendicularly with respect to the central distribution channel, and
a mounting assembly, wherein the mounting assembly comprises at least two components spatially separated by the precursor distribution assembly; and
a support assembly including at least two support extensions extending parallel to the central distribution channel.
15 . A support assembly comprising:
a mounting plate coupled with a first semiconductor processing system component; and at least one support extension coupled with the mounting plate, wherein the at least one support extension is separated from a second semiconductor processing system component in a first operational position, and wherein the at least one support extension is configured to contact the second semiconductor processing system component in a second operational position engageable during a process operation.Join the waitlist — get patent alerts
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