Semiconductor device being capable of improving the breakdown characteristics

Abstract

A semiconductor device, wherein the semiconductor device includes a high-voltage supply circuit suitable for supplying a high voltage; a discharge circuit suitable for discharging the high voltage; and an auxiliary-voltage supply circuit suitable for supplying a first auxiliary voltage, which varies according to an operation state of the high-voltage supply circuit, to a reference node of the discharge circuit.

1 - 12 . (canceled) 
     
     
         13 . A semiconductor device, comprising:
 a memory block including memory cells;   a high-voltage supply circuit suitable for supplying a high voltage;   an auxiliary-voltage supply circuit suitable for supplying a first auxiliary voltage, which varies according to an operation state of the high-voltage supply circuit; and   a transfer circuit connected between global lines and local lines of the memory block, and suitable for transferring operation voltages of the global lines to the local lines in response to the high voltage and the first auxiliary voltage.   
     
     
         14 . The semiconductor device of  claim 13 , wherein the auxiliary-voltage supply circuit supplies the first auxiliary voltage having the same level as the high voltage when the high-voltage supply circuit operates, and the first auxiliary voltage having a lower level than the input voltage when the high-voltage supply circuit does not operate. 
     
     
         15 . The semiconductor device of  claim 13 , wherein the transfer circuit includes:
 a first transistor suitable for transferring the operation voltages in response to the first auxiliary voltage; and   a second transistor suitable for outputting the transferred operation voltages from the first transistor to the local lines in response to the high voltage.   
     
     
         16 . The semiconductor device of  claim 13 ,
 further comprising a discharge circuit suitable for discharging the high voltage,   wherein the auxiliary-voltage supply circuit supplies a second auxiliary voltage, which varies according to the operation state of the high-voltage supply circuit, to a reference node of the discharge circuit.   
     
     
         17 . The semiconductor device of  claim 16 ,
 wherein the auxiliary-voltage supply circuit supplies the second auxiliary voltage having a positive polarity to the reference node when the high-voltage supply circuit operates, and   wherein the auxiliary-voltage supply circuit supplies the second auxiliary voltage having a ground level to the reference node when the high-voltage supply circuit does not operate.   
     
     
         18 . The semiconductor device of  claim 16 , wherein the discharge circuit includes a transistor having the reference node. 
     
     
         19 . The semiconductor device of  claim 18 ,
 wherein the auxiliary-voltage supply circuit supplies the second auxiliary voltage of a positive polarity to the reference node, and a third auxiliary voltage of a positive polarity to a gate of the transistor when the high-voltage supply circuit operates, and   wherein the auxiliary-voltage supply circuit supplies the second auxiliary voltage having a ground level to the reference node, and the third auxiliary voltage having a ground level to the gate of the transistor when the high-voltage supply circuit does not operate.   
     
     
         20 . The semiconductor device of  claim 13 , wherein the auxiliary-voltage supply circuit operates in response to a control signal generated in the high-voltage supply circuit.