Test device and test system of semiconductor device and test method for testing semiconductor device

Abstract

A test device of a semiconductor device for testing semiconductor device including a plurality of interface pads includes a plurality of coupling units each configured to be coupled to a corresponding one of the plurality of interface pads, a channel configured to be coupled to the plurality of coupling units, a voltage generating unit configured to generate a test voltage applied to the channel, and a current measuring unit configured to measure a current that flows on the channel in response to the test voltage.

1 - 5 . (canceled) 
     
     
         6 . A test system of a semiconductor device, comprising:
 a semiconductor device including a plurality of interface pads for inputting or outputting a signal; and   a test device including a plurality of coupling units, each configured to be coupled to a corresponding one of the plurality of interface pads, and a channel coupled to the plurality of coupling units,   wherein the test device applies a test voltage to the channel and measures a current that flows on the channel in response to the test voltage.   
     
     
         7 . The test system of the semiconductor device of  claim 6 , further comprising:
 a voltage generating unit configured to generate the test voltage applied to the channel;   a current measuring unit configured to measure the current which flows on the channel in response to the test voltage; and   a result analyzing unit configured to analyze a coupling state and a coupling strength between each of the plurality of coupling units and a corresponding one of the plurality of interface pads based on the test voltage, and the current which flows on the channel in response to the test voltage.   
     
     
         8 . The test system of the semiconductor device of  claim 7 , wherein, as a number of the plurality of coupling units coupled to the plurality of interface pads is increased and a coupling strength between the plurality of coupling units and the plurality of interface pads is increased, the current which flows on the channel in response to the test voltage is increased. 
     
     
         9 . The test system of the semiconductor device of  claim 6 , wherein each of the plurality of interface pads is coupled to a current path. 
     
     
         10 . The test system of the semiconductor device of  claim 6 , wherein the semiconductor device further comprises
 an internal circuit configured to perform an intrinsic operation using a signal that is input or output through the plurality of interface pads; and   an electrostatic discharge circuit configured to protect the internal circuit from an electrostatic that is input through the plurality of interface pads.   
     
     
         11 . The test system of the semiconductor device of  claim 10 , wherein the electrostatic discharge circuit comprises
 at least one first diode configured to be coupled between a power voltage supply terminal for supplying a power voltage to the internal circuit and an interface pad corresponding to the at least one first diode out of the plurality of interface pads; and   at least one second diode configured to be coupled between a ground voltage terminal for supplying a ground voltage to the internal circuit and an interface pad corresponding to the at least one second diode out of the plurality of interface pads.   
     
     
         12 . The test system of the semiconductor device of  claim 11 , wherein the test voltage is same as or higher than a sum of the power voltage and a threshold voltage of the at least one first diode. 
     
     
         13 . A test method for testing a semiconductor device having a plurality of interface pads, comprising:
 coupling a plurality of coupling units to a plurality of interface pads;   applying a test voltage to a channel coupled to the plurality of coupling units; and   measuring a current that flows on the channel in response to the test voltage.   
     
     
         14 . The test method for testing the semiconductor device of  claim 13 , further comprising:
 analyzing a coupling state and a coupling strength between each of the plurality of coupling units and a corresponding one of the plurality of interface pads based on the test voltage, and the current which flows on the channel in response to the test voltage.   
     
     
         15 . The test method for testing the semiconductor device of  claim 13 , wherein, as a number of the plurality of coupling units coupled to the plurality of interface pads is increased and a coupling strength between the plurality of coupling units and the plurality of interface pads is increased, the current which flows on the channel in response to the test voltage is increased. 
     
     
         16 . The test method for testing the semiconductor device of  claim 13 , wherein each of the plurality of interface pads is coupled to a current path.