Semiconductor light-emitting element, light emitting device, and method of manufacturing semiconductor light-emitting element

Abstract

A semiconductor light-emitting element includes a stacked body having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. A first metal layer is on the second semiconductor layer. The first metal layer includes a first region extending outward from the stacked body and a second region adjacent to the first region. A distance between a lower surface and an upper surface of the first metal layer in the first region is shorter than a distance between the lower end and the upper surface of the first metal layer in the second region. The lower and upper surfaces of the first metal layer in the first region extend along an outer edge of the first metal layer.

What is claimed is: 
     
         1 . A semiconductor light-emitting element, comprising:
 a stacked body that includes:
 a first semiconductor layer that is a first conductivity type, 
 a second semiconductor layer that is a second conductivity type, and 
 a light emitting layer between the first semiconductor layer and the second semiconductor layer; and 
   a first metal layer on the second semiconductor layer, and electrically connected to the second semiconductor layer,   wherein the first metal layer includes a first region that extends outward from the stacked body and a second region that is adjacent to the first region,   wherein a distance between a lower surface of the first metal layer and an upper surface of the first metal layer in the first region is shorter than a distance between the lower surface of the first metal layer and the upper surface of the first metal layer in the second region, and   wherein the lower surface of the first metal layer and the upper surface of the first metal layer in the first region extends along an outer edge of the first metal layer.   
     
     
         2 . The semiconductor light-emitting element according to  claim 1 , further comprising:
 a first conductive layer,   wherein the first semiconductor layer has a first surface and a second surface that is opposite to the first surface, the second surface having a first portion and a second portion,   wherein the light emitting layer is selectively disposed on the first portion of the second surface of the first semiconductor layer,   wherein the first conductive layer is electrically connected to the second portion of the second surface of the first semiconductor layer,   wherein the first conductive layer extends outward from the stacked body, and   wherein the first region is provided outward from the first conductive layer.   
     
     
         3 . The semiconductor light-emitting element according to  claim 2 ,
 wherein a reflectance of the first conductive layer to light that is radiated from the light emitting layer is higher than a reflectance of the first metal layer.   
     
     
         4 . The semiconductor light-emitting element according to  claim 1 , further comprising:
 a second metal layer,   wherein the first semiconductor layer has a first surface and a second surface that is opposite to the first surface,   wherein the light emitting layer is selectively provided on the second surface of the first semiconductor layer, and   wherein the second metal layer is electrically connected to the first surface.   
     
     
         5 . The semiconductor light-emitting element according to  claim 1 , further comprising a first conductive layer electrically connected to the first semiconductor layer, wherein the first conductive layer extends outward from the stacked body, and a reflectance of the first conductive layer to light that is radiated from the light emitting layer is higher than a reflectance of the first metal layer. 
     
     
         6 . The semiconductor light-emitting element according to  claim 5 , wherein a surface of the first semiconductor layer facing away from the second semiconductor layer has a plurality of convex portions. 
     
     
         7 . The semiconductor light-emitting element according to  claim 6 , further comprising an electrode on the first conductive layer. 
     
     
         8 . The semiconductor light-emitting element according to  claim 1 , wherein the stacked body is located inward from the second region of the first metal layer. 
     
     
         9 . A semiconductor light-emitting element comprising:
 a stacked body that includes:
 a first semiconductor layer that is a first conductivity type, 
 a second semiconductor layer that is a second conductivity type, 
 a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and 
 a first region in which the first semiconductor layer is exposed to the second semiconductor layer; and 
   a first metal layer disposed on the second semiconductor layer and electrically connected to the first semiconductor layer of the stacked body,   wherein the first metal layer has a first region that extends outward from the stacked body and a second region that is adjacent to the first region,   wherein a distance between a lower end of the first metal layer and an upper end of the first metal layer in the first region is shorter than a distance between the lower end of the first metal layer and the upper end of the first metal layer in the second region, and   wherein a lower surface of the first metal layer and an upper surface of the first metal layer in the first region extends along an outer edge of the first metal layer.   
     
     
         10 . The semiconductor light-emitting element according to  claim 9 , wherein the stacked body is located inward from the second region of the first metal layer. 
     
     
         11 . The semiconductor light-emitting element according to  claim 9 , wherein a surface of the first semiconductor layer facing away from the second semiconductor layer has a plurality of convex portions. 
     
     
         12 . The semiconductor light-emitting element according to  claim 9 , further comprising a first conductive layer electrically connected to the first semiconductor layer, wherein the first conductive layer extends outward from the stacked body, and a reflectance of the first conductive layer to light that is radiated from the light emitting layer is higher than a reflectance of the first metal layer. 
     
     
         13 . The semiconductor light-emitting element according to  claim 9 , further comprising an electrode on the first metal layer and connected to the second semiconductor layer. 
     
     
         14 . A light emitting device, comprising:
 the semiconductor light-emitting element according to  claim 1 ; and   a reflector that reflects light radiated from the light emitting layer of the semiconductor light-emitting element outward from the stacked body thereof without reaching the first region of the first metal layer.   
     
     
         15 . The light emitting device according to  claim 14 , wherein the semiconductor light-emitting element further comprises a first conductive layer electrically connected to the first semiconductor layer, wherein the first conductive layer extends outward from the stacked body, and a reflectance of the first conductive layer to light that is radiated from the light emitting layer is higher than a reflectance of the first metal layer. 
     
     
         16 . The light emitting device according to  claim 14 , wherein a surface of the first semiconductor layer facing away from the second semiconductor layer has a plurality of convex portions. 
     
     
         17 . The light emitting device according to  claim 16 , wherein the semiconductor light-emitting element further comprises an electrode on the first conductive layer. 
     
     
         18 . A method of manufacturing a semiconductor light-emitting element, comprising:
 forming a stacked body with a light emitting region and a mesa region, the light emitting region including:
 a first semiconductor layer that has a first surface and a second surface opposite the first surface, and that is a first conductivity type; 
 a first light emitting layer selectively disposed on the second surface of the first semiconductor layer; and 
 a second semiconductor layer that, along with the first semiconductor layer, sandwiches the first light emitting layer, the second semiconductor layer having a second conductivity type, wherein the mesa region includes: the first semiconductor layer; 
 a second light emitting layer that is selectively disposed on the second surface of the first semiconductor layer; and 
 a third semiconductor layer that, along with the first semiconductor layer, sandwiches the second light emitting layer, the third semiconductor layer having the second conductivity type; 
   forming a first insulating layer that covers the second surface of the first semiconductor layer, the light emitting region, and the mesa region;   forming a first conductive layer that is electrically connected to the second surface of the first semiconductor layer, and that covers a portion of the first insulation layer;   forming a second insulating layer that covers the first insulating layer and the first conductive layer;   etching the second insulating layer and the first insulating layer to expose the second semiconductor layer;   forming a first metal region that is electrically connected to the second semiconductor layer, covers the second insulating layer, and includes a first region to which a pattern of the mesa region is transferred;   forming a first metal layer that connects a second metal region and the first metal region; and   removing the mesa region and a portion of the first semiconductor layer in such a manner that the first metal layer extends outward from the stacked body.   
     
     
         19 . The method according to  claim 18 , further comprising:
 cutting the first region of the first metal layer in a direction from the first semiconductor layer to the second semiconductor layer.   
     
     
         20 . The method according to  claim 19 , further comprising forming a reflective metal layer on the exposed portions of the second semiconductor layer.