US2016204653A1PendingUtilityA1

Semiconductor device being capable of improving the breakdown characteristics

Assignee: SK HYNIX INCPriority: Apr 1, 2014Filed: Mar 18, 2016Published: Jul 14, 2016
Est. expiryApr 1, 2034(~7.7 yrs left)· nominal 20-yr term from priority
Inventors:Yeonghun Lee
G11C 16/30H02J 9/061G05B 11/01
41
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Claims

Abstract

A semiconductor device, wherein the semiconductor device includes a high-voltage supply circuit suitable for supplying a high voltage; a discharge circuit suitable for discharging the high voltage; and an auxiliary-voltage supply circuit suitable for supplying a first auxiliary voltage, which varies according to an operation state of the high-voltage supply circuit, to a reference node of the discharge circuit.

Claims

exact text as granted — not AI-modified
1 - 7 . (canceled) 
     
     
         8 . A semiconductor device, comprising:
 a high-voltage supply circuit suitable for supplying a high voltage;   an auxiliary-voltage supply circuit suitable for supplying an auxiliary voltage, which varies according to an operation state of the high-voltage supply circuit; and   a transfer circuit suitable for transferring an input voltage in response to the high voltage and the auxiliary voltage.   
     
     
         9 . The semiconductor device of  claim 8 , wherein the auxiliary-voltage supply circuit supplies the auxiliary voltage having the same level as the high voltage when the high-voltage supply circuit operates, and the auxiliary voltage having a lower level than the input voltage when the high-voltage supply circuit does not operate. 
     
     
         10 . The semiconductor device of  claim 8 , wherein the transfer circuit includes:
 a first transistor suitable for transferring the input voltage; and   a second transistor suitable for outputting the transferred input voltage from the first transistor.   
     
     
         11 . The semiconductor device of  claim 10 , wherein the first transistor operates in response to the auxiliary voltage, and the second transistor operates in response to the high voltage. 
     
     
         12 . The semiconductor device of  claim 8 ,
 wherein the high-voltage supply circuit includes:   a high-voltage supply control unit suitable for generating a control signal; and   a high-voltage supply unit suitable for outputting the high voltage in response to the control signal, and   wherein the auxiliary-voltage supply circuit operates in response to the control signal.   
     
     
         13 - 20 . (canceled)

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