Substrate manufacturing method and substrate manufacturing apparatus

Abstract

Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

What is claimed is: 
     
         1 . A substrate manufacturing method, comprising:
 providing a substrate;   inducing a plasma reaction in a chamber; and   alternately providing a first gas and a second gas into the chamber to etch the substrate,
 wherein each of the first and second gases is alternately provided into the chamber at a stabilized feed pressure, and wherein the stabilized feed pressures of the first and second gases have a substantially square wave transition profile. 
   
     
     
         2 . The substrate manufacturing method of  claim 1 , wherein providing the first gas and the second gas further comprises:
 providing the first gas at a first pressure to deposit a polymer on the substrate; and   providing the second gas at a second pressure which is different from the first pressure to etch the polymer and the substrate,
 wherein the first gas and the second gas are provided according to a cross-feed feed pressure pulse having a square-wave shape corresponding to a difference between the first and second pressures. 
   
     
     
         3 . The substrate manufacturing method of  claim 2 , wherein the cross-feed feed pressure pulse comprises an initial feed pressure value and a final feed pressure value of each of the first and second gases,
 wherein when the cross-feed feed pressure pulse has the square-wave shape, and wherein the initial feed pressure value is equal to the final feed pressure value.   
     
     
         4 . The substrate manufacturing method of  claim 1 , wherein the first gas is provided into the chamber at a flow rate of from about 20% to about 50% greater than that of the second gas. 
     
     
         5 . The substrate manufacturing method of  claim 1 , wherein each of the first gas and the second gas comprises carbon fluoride. 
     
     
         6 . The substrate manufacturing method of  claim 5 , wherein each of the first gas and the second gas further comprises an inert gas.