Solid-state image sensing device and camera system with divided pixels

Abstract

A solid-state image sensing device includes: a pixel part in which pixels are arranged in a matrix; and a pixel signal readout part including an AD conversion part that analog-digital (AD)-converts a pixel signal read out from the pixel part. Each of the adjacent pixels or one of the pixels of the pixel part is formed as divided pixels divided into regions with different photosensitivity or amounts of accumulated charge, photosensitivity or exposure time conditions are set for the divided pixels and the photosensitivity or exposure time conditions of the divided pixels provided to be opposed in diagonal directions are set to the same conditions, the pixel signal readout part reads out divided pixel signals of the respective divided pixels of the pixel, and the AD conversion part obtains a pixel signal of one pixel by AD-converting the respective read out divided pixel signals and adding the signals.

What is claimed is: 
     
         1 . An imaging device comprising a plurality of pixel groups, at least one of the pixel groups including:
 a first floating diffusion;   a second floating diffusion;   a third floating diffusion;   a fourth floating diffusion;   a first photoelectric conversion element;   a second photoelectric conversion element;   a third photoelectric conversion element;   a fourth photoelectric conversion element;   a first transfer transistor connected between the first photoelectric conversion element and the first floating diffusion;   a second transfer transistor connected between the second photoelectric conversion element and the second floating diffusion;   a third transfer transistor connected between the third photoelectric conversion element and the third floating diffusion;   a fourth transfer transistor connected between the fourth photoelectric conversion element and the fourth floating diffusion; and   an amplifying transistor,   wherein a gate of the amplifying transistor is connected to the first floating diffusion, the second floating diffusion, the third floating diffusion, and the fourth floating diffusion.   
     
     
         2 . The imaging device according to the  claim 1 , wherein the one of the pixel groups further including:
 a first selection transistor connected between the gate of the amplifying transistor and the first floating diffusion;   a second selection transistor connected between the gate of the amplifying transistor and the second floating diffusion;   a third selection transistor connected between the gate of the amplifying transistor and the third floating diffusion; and   a fourth selection transistor connected between the ate of the amplifying transistor and the fourth floating diffusion.   
     
     
         3 . The imaging device according to the  claim 1 , wherein the first and the fourth photoelectric conversion elements are arranged along a first direction, and
 wherein the second and the third photoelectric conversion elements are arranged along a second direction,   
     
     
         4 . The imaging device according to the  claim 1 , wherein the first, the second, the third, and the fourth photoelectric conversion elements are arranged along a first direction. 
     
     
         5 . An imaging device comprising a plurality of pixel groups, at least one of the pixel groups including:
 a first floating diffusion;   a second floating diffusion;   a first photoelectric conversion element;   a second photoelectric conversion element;   a first transfer transistor connected between the first photoelectric conversion element and the first floating diffusion;   a second transfer transistor connected between the second photoelectric conversion element and the second floating diffusion; and   an amplifying transistor,   wherein a gate of the amplifying transistor is connected to the first floating diffusion and the second floating diffusion different from the first direction.   
     
     
         6 . The imaging device according to the  claim 5 , wherein the one of the pixel groups further including:
 a first selection transistor connected between the gate of the amplifying transistor and the first floating diffusion; and   a second selection transistor connected between the gate of the amplifying transistor and the second floating diffusion.   
     
     
         7 . An imaging device comprising a plurality of pixel groups, at least one of the pixel groups including:
 a first floating diffusion;   a second floating diffusion;   a first photoelectric conversion element;   a second photoelectric conversion element;   a third photoelectric conversion element;   a fourth photoelectric conversion element;   a first transfer transistor connected between the first photoelectric conversion element and the first floating diffusion;   a second transfer transistor connected between the second photoelectric conversion element and the first floating diffusion;   a third transfer transistor connected between the third photoelectric conversion element and the second floating diffusion;   a fourth transfer transistor connected between the fourth photoelectric conversion element and the second floating diffusion; and   an amplifying transistor,   wherein a gate of the amplifying transistor is connected to the first floating diffusion and the second floating diffusion.   
     
     
         8 . The imaging device according to the  claim 7 , wherein the one of the pixel groups further including:
 a first selection transistor connected between the gate of the amplifying transistor and the first floating diffusion; and   a second selection transistor connected between the gate of the amplifying transistor and the second floating diffusion.   
     
     
         9 . The imaging device according to the  claim 7 , wherein the first and the fourth photoelectric conversion elements are arranged along a first direction, and
 wherein the second and the third photoelectric conversion elements are arranged along a second direction different from the first direction.   
     
     
         10 . The imaging device according to the  claim 7 , wherein the first, the second, the third, and the fourth photoelectric conversion elements are arranged along a first direction. 
     
     
         11 . The imaging device according to the  claim 7 , wherein the one of the pixel groups further including:
 a first reset transistor connected to the first floating diffusion; and   a second reset transistor connected to the second floating diffusion.