Non-volatile memory device

Abstract

According to one embodiment, a non-volatile memory device includes electrodes, one semiconductor layer, conductive layers, and first and second insulating films. The electrodes are arranged side by side in a first direction. The semiconductor layer extends into the electrodes in the first direction. The conductive layers are provided between each electrode and the semiconductor layer and separated from each other in the first direction. The first insulating film extends between the conductive layers and the semiconductor layer in the first direction. The second insulating film is provided between each electrode and the conductive layers. The conductive layers become smaller in a thickness as the conductive layers are closer to an end in the first direction or a direction opposite to the first direction. The second insulating film includes a first film contacting the conductive layers, and a second film provided between each electrode and the first film.

What is claimed is: 
     
         1 . A non-volatile memory device comprising:
 a plurality of electrodes arranged side by side in a first direction;   at least one semiconductor layer extending into the electrodes in the first direction;   conductive layers provided between each of the electrodes and the semiconductor layer, the conductive layers being separated from each other in the first direction;   a first insulating film extending between the conductive layers and the semiconductor layer in the first direction along the semiconductor layer; and   a second insulating film provided between each of the electrodes and the conductive layers,   the conductive layers becoming smaller in a thickness in a direction perpendicular to the first direction as the conductive layers are closer to an end of each of the conductive layers in the first direction or a direction opposite to the first direction, and having a convex shape in a direction from the semiconductor layer toward each of the electrodes,   the second insulating film including a first film in contact with the conductive layers, and a second film provided between each of the electrodes and the first film, and   a dielectric constant of the first film being higher than a dielectric constant of the second film.