Three-dimensional integrated structure comprising an antenna cross reference to related applications
Abstract
A three-dimensional integrated structure includes a support element, an interface device connected to the support element by a first electrically conductive connection, and an integrated circuit arranged between the support element and the interface device and connected to the interface device by a second electrically conductive connection. A filler region is positioned between the second electrically conductive connection and between the interface device and the integrated circuit. An antenna is distributed over the interface device and the integrated circuit and has a radiating element electromagnetically coupled with an excitation element through the interconnection of a slot.
Claims
exact text as granted — not AI-modified1 . An apparatus, comprising:
a support element, an interface device connected to the support element by first electrically conductive connection means, the interface device comprising a first semiconductor substrate and a first interconnection part including a plurality of metallization levels, an integrated circuit arranged between the support element and the interface device and connected to the interface device by second electrically conductive connection means, the integrated circuit comprising a second semiconductor substrate and a second interconnection part including a plurality of metallization levels, an adhesive material filler region between the second electrically conductive connection means and between and in contact with both the first interconnection part of the interface device and the second interconnection part of the integrated circuit, and an antenna, having an earth plane equipped with an aperture and located within the plurality of metallization levels of the first interconnection part, a radiating element separated from the earth plane by the first semiconductor substrate, and an excitation element located within the plurality of metallization levels of the second interconnection part and separated from the earth plane by the adhesive material filler region, wherein the aperture is configured to permit electromagnetic coupling between the excitation element and the radiating element.
2 . The apparatus according to claim 1 , wherein the second electrically conductive connection means comprise electrically conductive pillars extending through the adhesive material filler region.
3 . The apparatus according to claim 1 , wherein the first semiconductor substrate has a first face supporting the first interconnection part and a second face, opposite the first face, supporting the radiating element.
4 . The apparatus according to claim 1 , wherein the earth plane is produced at a lowest metallization level of the plurality of metallization levels for the first interconnection part.
5 . The apparatus according to claim 1 , wherein the excitation element is produced within a highest metallization level of the plurality of metallization levels for the second interconnection part.
6 . The apparatus according to claim 5 , wherein the antenna further comprises a reflector produced within a lower metallization level of the plurality of metallization levels for the second interconnection part.
7 . The apparatus according to claim 5 , wherein the antenna further comprises a reflector located within the plurality of metallization levels for the second interconnection part.
8 . The apparatus according to claim 7 , wherein the reflector is formed of metal on one metallization level of the second interconnection part and side walls formed using vias extending between metallization levels.
9 . An apparatus, comprising:
an integrated circuit package including:
an interface device comprising a first semiconductor substrate and a first interconnection part including a plurality of metallization levels;
an integrated circuit comprising a second semiconductor substrate and a second interconnection part including a plurality of metallization levels;
wherein the integrated circuit is mounted to and electrically connected with the interface device; and
an antenna structure comprising: an earth plane equipped with an aperture and located within the plurality of metallization levels of the first interconnection part, a radiating element mounted on a back surface of the first semiconductor substrate, and an excitation element located within the plurality of metallization levels of the second interconnection part.
10 . The apparatus of claim 9 , wherein the wireless communication apparatus is a cellular mobile telephone.
11 . The apparatus of claim 9 , wherein the antenna further comprises a reflector located within the plurality of metallization levels for the second interconnection part.
12 . The apparatus of claim 11 , wherein the reflector is formed one of the metallization levels and the excitation element is formed on another of the metallization levels, wherein the one of the metallization levels for the reflector is closer to the second semiconductor substrate.
13 . The apparatus of claim 11 , wherein the reflector is formed of metal on one metallization level of the second interconnection part and side walls formed using vias extending between metallization levels.
14 . An apparatus, comprising:
an interface device comprising a first semiconductor substrate and a first interconnection part including a plurality of metallization levels; an integrated circuit comprising a second semiconductor substrate and a second interconnection part including a plurality of metallization levels; wherein the integrated circuit is mounted to and electrically connected with the interface device; and an antenna structure comprising: an earth plane equipped with an aperture and located within the plurality of metallization levels of the first interconnection part, a radiating element mounted on a back surface of the first semiconductor substrate, and an excitation element located within the plurality of metallization levels of the second interconnection part.
15 . The apparatus of claim 14 , wherein the antenna further comprises a reflector located within the plurality of metallization levels for the second interconnection part.
16 . The apparatus of claim 15 , wherein the reflector is formed one of the metallization levels and the excitation element is formed on another of the metallization levels, wherein the one of the metallization levels for the reflector is closer to the second semiconductor substrate.
17 . The apparatus of claim 15 , wherein the reflector is formed of metal on one metallization level of the second interconnection part and side walls formed using vias extending between metallization levels.
18 . An apparatus, comprising:
a support element, an interface device electrically connected to the support element by a first electrical connection, an integrated circuit arranged between the support element and the interface device and connected to the interface device by a second electrical connection, the integrated circuit comprising a semiconductor substrate having a first face supporting an interconnection part having a plurality of metallization levels enclosed in an insulating region, and an antenna having:
a first antenna substrate and a second antenna substrate which are separated by an earth plane having an aperture,
a radiating element separated from the earth plane by the first antenna substrate,
an excitation element separated from the earth plane by the second antenna substrate, wherein the excitation element is positioned within an upper one of the metallization levels of the interconnection part, and
a reflector positioned within a lower one of the metallization levels of the interconnection part facing the excitation element, the aperture configured to permit electromagnetic coupling between the excitation element and the radiating element,
wherein the interface device incorporates the radiating element, the first antenna substrate and the earth plane, and wherein the integrated circuit incorporates the excitation element.Join the waitlist — get patent alerts
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