Low voltage nanoscale vacuum electronic devices

Abstract

An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

1 - 19 . (canceled) 
     
     
         20 . A method of making an electronic device, comprising:
 providing a structure that includes a first conducting layer, a second conducting layer, and an insulating layer provided between the first conducting layer and the second conducting layer, and   providing at least one side wall in the structure that extends from the first conducting layer to the second conducting layer and that includes at least a portion of each of the first conducting layer, the second conducting layer and the insulating layer, wherein the at least one side wall is structured such that responsive to a bias voltage applied between the first conducting layer and the second conducting layer a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer and electrons from the two dimensional electron system are emitted from the at least one side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.   
     
     
         21 . The method according to  claim 20 , wherein the providing at least one side wall comprises providing a void channel in the structure that extends at least from a bottom surface of first conducting layer through the insulating layer and partially to the top surface of the second conducting layer, wherein the at least one side wall is formed by the void channel. 
     
     
         22 . The method according to  claim 20 , wherein the providing at least one side wall comprises providing a mesa or pillar structure that extends from the top surface of first conducting layer through the first conducting layer, the insulating layer and partially to the top surface of the second conducting layer, wherein the at least one one side wall is formed on the mesa/pillar structure. 
     
     
         23 . The method according to  claim 21 , wherein the providing the void channel comprises etching the void channel into the structure. 
     
     
         24 . The method according to  claim 22 , wherein the providing the void channel comprises etching the mesa/pillar structure. 
     
     
         25 . The method according to  claim 21 , where the providing the void channel comprises focused-ion-beam etching the void channel into the structure. 
     
     
         26 . The method according to  claim 20 , wherein the providing at least one side wall comprises cleaving the structure to provide an edge that extends from a top surface of the first conducting layer to a bottom surface of the second conducting layer. 
     
     
         27 - 34 . (canceled) 
     
     
         35 . A photodetector, comprising:
 a transparent first conducting layer,   a second conducting layer; and   an insulating layer provided between the first conducting layer and the second conducting layer;   wherein the photodetector includes a void channel defining at least one side wall that extends from the insulating layer to the second conducting layer and that includes at least a portion of the second conducting layer and the insulating layer.   
     
     
         36 . An image sensor array comprising a plurality of photodetectors according to  claim 35 . 
     
     
         37 . A spectral sensing device, comprising:
 a transparent first conducting layer including a conductive material having a plurality of apertures provided therein;   a second conducting layer; and   an insulating layer provided between the first conducting layer and the second conducting layer;   wherein the spectral sensing device includes a void channel defining at least one side wall that extends from the insulating layer to the second conducting layer and that includes at least a portion of the second conducting layer and the insulating layer.   
     
     
         38 . A photovoltaic cell, comprising:
 a transparent first conducting layer;   a light absorbing second conducting layer attached to a metal Ohmic contact layer; and   an insulating layer provided between the first conducting layer and the second conducting layer,   wherein the photovoltaic cell includes a void channel defining at least one side wall that extends from the insulating layer to the second conducting layer and that includes at least a portion of the second conducting layer and the insulating layer.   
     
     
         39 . An electron source device, comprising:
 a first conducting layer having an aperture provided therein;   a second conducting layer; and   an insulating layer provided between the first conducting layer and the second conducting layer;   wherein the electron source device includes a void channel defining at least one side wall that extends from the insulating layer to the second conducting layer and that includes at least a portion of the second conducting layer and the insulating layer, and wherein the aperture is aligned with and provide over the void channel.   
     
     
         40 . A field emission display device, comprising:
 a light emitting layer made of a material that emits light in response to electron excitation;   a transparent first conducting layer provided on a first surface of the light emitting layer;   a second conducting layer; and   an insulating layer provided between the light emitting layer and the second conducting layer;   wherein the field emission display device includes a void channel defining at least one side wall that extends from the insulating layer to the second conducting layer and that includes at least a portion of the second conducting layer and the insulating layer.