Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device

Abstract

A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

What is claimed is: 
     
         1 . A nonvolatile memory device, comprising:
 a program circuit configured to receive a latency option from an external device and to store the latency option;   an address decoder configured to receive a read address and to select at least one memory cell of a memory cell array in response to the read address;   a control logic configured to receive a read command and a read enable signal and to detect toggling of the read enable signal;   a clock generator configured to generate a clock in response to toggling of the read enable signal;   a read and write circuit configured to read data from the at least one of the memory cell array; and   an input/output driver configured to generate a strobe signal in response to toggling of the read enable signal, to output to an external device the strobe signal, and to output to the external device the data provided from the read and write circuit after the strobe signal is toggled N times, N being related to the latency option stored in the program circuit,   wherein the read and write circuit is configured to provide the data to the input/output driver in response to the clock,   the read enable signal is not toggled while the read command is received by the control circuit and the read address is received by the address decoder, and   the read enable signal starts toggling after the read command is received by the control circuit and the read address is received by the address decoder.