Systems and methods for horizontal integration of acceleration sensor structures

Abstract

Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.

What is claimed is: 
     
         1 . A sensor device comprising:
 a substrate;   a first trench in the substrate;   a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and   a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.   
     
     
         2 . The sensor device of  claim 1 , wherein the first trench comprises a shallow-trench isolation element (STI). 
     
     
         3 . The sensor device of  claim 1 , wherein the first layer comprises a functional layer. 
     
     
         4 . The sensor device of  claim 1 , wherein the first plurality of support elements are arranged at at least two corners of the first moveable element. 
     
     
         5 . The sensor device of  claim 1 , wherein the first plurality of support elements are arranged along at least two edges of the first moveable element. 
     
     
         6 . The sensor device of  claim 1 , wherein the first moveable element has a thickness of about 300 nanometers. 
     
     
         7 . The sensor of  claim 1 , wherein at least one of the first plurality of support elements has a lateral dimension less than about 10 micrometers (μm). 
     
     
         8 . The sensor of  claim 1 , further comprising:
 a second trench in the substrate;   a second moveable element suspended in the second trench by a second plurality of support elements spaced apart from one another and arranged at a perimeter of the second moveable element,   wherein the first layer seals the second trench, thereby providing a second cavity containing the second moveable element and the second plurality of support elements.