Semiconductor light emitting device and fabrication method of the semiconductor light emitting device

Abstract

A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided. The semiconductor light emitting device including: a semiconductor substrate structure including a semiconductor substrate, a first metal layer placed on a first surface of the semiconductor substrate, and a second metal layer placed on a second surface of the semiconductor substrate; and a light emitting diode structure including a third metal layer placed on the semiconductor substrate structure, a current control layer placed on the third metal layer and composed of a transparent insulating film and a current control electrode, an epitaxial growth layer placed on the current control layer, and a surface electrode placed on the epitaxial growth layer, wherein the semiconductor substrate structure and the light emitting diode structure are bonded by using the first metal layer and the third metal layer.

What is claimed is: 
     
         1 . A semiconductor light emitting device comprising:
 a conductive substrate structure comprising a conductive substrate, a first metal layer disposed on a first surface of the conductive substrate, and a second metal layer disposed on a second surface of the conductive substrate; and   a light emitting diode structure disposed on the conductive substrate structure, the light emitting diode structure comprising a third metal layer, a current control layer disposed on the third metal layer, the current control layer composed of a transparent insulating film and a plurality of current control electrodes, an epitaxial growth layer disposed on the current control layer, and a surface electrode disposed on the epitaxial growth layer, the surface electrode including a wire bonding electrode, the plurality of the current control electrodes being respectively formed in a plurality of through-holes, the plurality of the through-holes respectively being formed so as to pass through the transparent insulating film, wherein   the conductive substrate structure and the light emitting diode structure are coupled to each other by bonding between the first metal layer and the third metal layer, wherein   the through-holes form a plurality of lines on circumferences of approximately concentric circles or a plurality of lines parallel to each other, and the through-holes are arranged at approximately equal intervals to each other, wherein   the plurality of the current control electrodes are distributed so that their density is high in a region not overlapping the wire bonding electrode when viewed from a laminating direction of the epitaxial growth layer, and their density is low in a region overlapping the wire bonding electrode when viewed from the laminating direction of the epitaxial growth layer.   
     
     
         2 . The semiconductor light emitting device according to  claim 1 , wherein
 the epitaxial growth layer includes a rectangular planar pattern, wherein   the surface electrode comprises:
 a center electrode disposed at a central part of the rectangular planar pattern; 
 a coupling electrode connected to the center electrode, the coupling electrode extended from the center electrode in a rectangular diagonal direction; and 
 a peripheral electrode connected to the coupling electrode, the peripheral electrode disposed at four corners of the rectangular planar pattern. 
   
     
     
         3 . The semiconductor light emitting device according to  claim 2 , wherein the peripheral electrode has an opening. 
     
     
         4 . The semiconductor light emitting device according to  claim 3 , wherein the opening is a rectangle. 
     
     
         5 . The semiconductor light emitting device according to  claim 3 , wherein the opening is substantially circular. 
     
     
         6 . The semiconductor light emitting device according to  claim 2 , wherein the peripheral electrode has a portion orthogonal to the coupling electrode. 
     
     
         7 . The semiconductor light emitting device according to  claim 1 , wherein the conductive substrate structure and the light emitting diode structure are coupled to each other by bonding the first metal layer and the third metal layer by thermocompression bonding. 
     
     
         8 . The semiconductor light emitting device according to  claim 1 , wherein the conductive substrate is formed of GaAs. 
     
     
         9 . The semiconductor light emitting device according to  claim 1 , wherein the epitaxial growth layer is formed of a GaAs layer. 
     
     
         10 . The semiconductor light emitting device according to  claim 1 , wherein the epitaxial growth layer includes an AlInGaP based material. 
     
     
         11 . The semiconductor light emitting device according to  claim 1 , wherein each of the first metal layer, the second metal layer, the third metal layers, the surface electrodes, and the current control electrodes comprises gold. 
     
     
         12 . The semiconductor light emitting device according to  claim 1 , wherein the transparent insulating film is formed of one selected from the group consisting of a silicon oxide film, a silicon nitride film, an SiON film, an SiOxNy film, and multilayer films thereof. 
     
     
         13 . The semiconductor light emitting device according to  claim 2 , wherein the plurality of the current control electrodes are distributed only over a region not overlapping at least one of the coupling electrode or the peripheral electrode when viewed from the laminating direction of the epitaxial growth layer. 
     
     
         14 . A semiconductor light emitting device comprising:
 a conductive substrate structure comprising a conductive substrate, a first metal layer disposed on a first surface of the conductive substrate, and a second metal layer disposed on a second surface of the conductive substrate; and   a light emitting diode structure disposed on the conductive substrate structure, the light emitting diode structure comprising a third metal layer, a current control layer disposed on the third metal layer, the current control layer composed of a transparent insulating film and a plurality of current control electrodes, an epitaxial growth layer disposed on the current control layer, and a surface electrode disposed on the epitaxial growth layer, the surface electrode including a wire bonding electrode, the plurality of the current control electrodes being respectively formed in a plurality of through-holes, the plurality of the through-holes respectively being formed so as to pass through the transparent insulating film, wherein   the conductive substrate structure and the light emitting diode structure are coupled to each other by bonding between the first metal layer and the third metal layer, wherein   the through-holes form a plurality of lines on circumferences of approximately concentric circles or a plurality of lines parallel to each other, and the through-holes are arranged at approximately equal intervals to each other, wherein   the plurality of the current control electrodes are distributed only over a region not overlapping the wire bonding electrode when viewed from a laminating direction of the epitaxial growth layer.   
     
     
         15 . The semiconductor light emitting device according to  claim 14 , wherein
 the epitaxial growth layer includes a rectangular planar pattern, wherein   the surface electrode comprises:
 a center electrode disposed at a central part of the rectangular planar pattern; 
 a coupling electrode connected to the center electrode, the coupling electrode extended from the center electrode in a rectangular diagonal direction; and 
 a peripheral electrode connected to the coupling electrode, the peripheral electrode disposed at four corners of the rectangular planar pattern. 
   
     
     
         16 . The semiconductor light emitting device according to  claim 15 , wherein the peripheral electrode has an opening. 
     
     
         17 . The semiconductor light emitting device according to  claim 16 , wherein the opening is a rectangle. 
     
     
         18 . The semiconductor light emitting device according to  claim 16 , wherein the opening is substantially circular. 
     
     
         19 . The semiconductor light emitting device according to  claim 15 , wherein the peripheral electrode has a portion orthogonal to the coupling electrode. 
     
     
         20 . The semiconductor light emitting device according to  claim 14 , wherein the conductive substrate structure and the light emitting diode structure are coupled to each other by bonding the first metal layer and the third metal layer by thermocompression bonding. 
     
     
         21 . The semiconductor light emitting device according to  claim 14 , wherein the conductive substrate is formed of GaAs. 
     
     
         22 . The semiconductor light emitting device according to  claim 14 , wherein the epitaxial growth layer is formed of a GaAs layer. 
     
     
         23 . The semiconductor light emitting device according to  claim 14 , wherein the epitaxial growth layer includes an AlInGaP based material. 
     
     
         24 . The semiconductor light emitting device according to  claim 14 , wherein each of the first metal layer, the second metal layer, the third metal layers, the surface electrodes, and the current control electrodes comprises gold. 
     
     
         25 . The semiconductor light emitting device according to  claim 14 , wherein the transparent insulating film is formed of one selected from the group consisting of a silicon oxide film, a silicon nitride film, an SiON film, an SiOxNy film, and multilayer films thereof. 
     
     
         26 . The semiconductor light emitting device according to  claim 15 , wherein the plurality of the current control electrodes are distributed only over a region not overlapping at least one of the coupling electrode or the peripheral electrode when viewed from the laminating direction of the epitaxial growth layer.