Methods of treating a semiconductor layer

Abstract

Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

1 .- 41 . (canceled) 
     
     
         42 . A method for treating a semiconductor layer comprising a semiconductor material, comprising:
 (a) contacting at least a portion of the semiconductor material with a passivating agent, the semiconductor material comprising a chalcogenide;   (b) introducing a dopant into the semiconductor material; and   (c) forming a chalcogen-rich region by contacting at least a portion of the semiconductor material with a chemical agent, wherein the chemical agent comprises iodine.   
     
     
         43 . The method of  claim 42 , wherein step (b) is performed before step (c). 
     
     
         44 . The method of  claim 42 , wherein the dopant comprises copper, silver, gold, or combinations thereof. 
     
     
         45 . The method of  claim 42 , wherein an average atomic concentration of the dopant in the semiconductor material is in a range from about 10 16  atoms/cm 3  to about 5×10 17  atoms/cm 3 . 
     
     
         46 . The method of  claim 42 , wherein the step (c) comprises forming a tellurium-rich region. 
     
     
         47 . A method for treating a semiconductor layer comprising a semiconductor material, comprising:
 (a) forming a chalcogen-rich region by contacting at least a portion of the semiconductor material with a chemical agent, wherein the chemical agent comprises iodine; and   (b) introducing a dopant into the chalcogen-rich region.   
     
     
         48 . The method of  claim 47 , wherein the steps (a) and (b) are performed simultaneously. 
     
     
         49 . The method of  claim 47 , wherein the steps (a) and (b) are performed sequentially. 
     
     
         50 . The method of  claim 47 , wherein the step (b) comprises contacting at least a portion of the semiconductor material with a contacting composition comprising the dopant at a concentration less than about 10 parts per million. 
     
     
         51 . The method of  claim 47 , wherein the dopant comprises copper, silver, gold, or combinations thereof. 
     
     
         52 . A method for treating a semiconductor layer comprising a semiconductor material, comprising:
 (a) contacting at least a portion of the semiconductor material with a chemical agent, wherein the chemical agent comprises iodine; and   (b) contacting at least a portion of the semiconductor material with copper.   
     
     
         53 . The method of  claim 52 , wherein the steps (a) and (b) are performed sequentially. 
     
     
         54 . The method of  claim 52 , wherein the steps (a) and (b) are performed simultaneously. 
     
     
         55 . A method for treating a semiconductor layer comprising a semiconductor material, comprising:
 (a) contacting at least a portion of the semiconductor material with a chemical agent, wherein the chemical agent comprises a metal halide; and   (b) contacting at least a portion of the semiconductor material with copper.   
     
     
         56 . The method of  claim 55 , wherein the steps (a) and (b) are performed sequentially. 
     
     
         57 . The method of  claim 55 , wherein the steps (a) and (b) are performed simultaneously. 
     
     
         58 . The method of  claim 55 , wherein the metal halide comprises manganese chloride, zinc chloride, ammonium chloride, or combinations thereof. 
     
     
         59 . A method for treating a semiconductor layer comprising a semiconductor material, comprising:
 contacting at least a portion of the semiconductor material with a tellurium-enriching chemical agent to form a tellurium-rich region, wherein the tellurium-enriching chemical agent comprises iodine.   
     
     
         60 . The method of  claim 59 , wherein the step of contacting comprises contacting at least a portion of the semiconductor material with a solution comprising the tellurium-etching chemical agent at a concentration in a range from about 0.01 grams per liter to about 1 grams per liter.