Thin film transistor and organic light-emitting display

Abstract

A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.

What is claimed is: 
     
         1 . A thin film transistor comprising:
 a substrate;   an active layer formed over the substrate and comprising a silicon layer having a nitrated surface;   a gate insulating layer formed over the active layer;   a gate electrode formed over the gate insulating layer;   an interlayer insulating layer formed over the gate electrode; and   source and drain electrodes that contact the active layer through openings in the interlayer insulating layer and comprise an aluminum-nickel alloy (AlNiX) layer and an indium tin oxide (ITO) layer, which are sequentially stacked.   
     
     
         2 . The thin film transistor of  claim 1 , wherein the X of the AlNiX layer comprises lanthanum (La). 
     
     
         3 . The thin film transistor of  claim 1 , wherein the Al layer has a thickness in the range of  300  Å to 1000 Å and the AlNiX layer has a thickness in the range of 3000 Å to 6000 Å. 
     
     
         4 . The thin film transistor of  claim 1 , further comprising a buffer layer between the substrate and the active layer.