Semiconductor device

Abstract

A semiconductor device in which the concentration of an electric field is suppressed in a region overriding a drain region and a source region. A drain region is formed in a first region, a source region is formed in a second region. A field oxide film surrounds the first region in a plan view. A metal interconnect situated over a field oxide film. The metal interconnect formed of a metal having an electric resistivity at 25° C. of 40 μΩ·cm or more and 200 μΩ·cm or less. Further, the metal interconnect is repeatedly provided spirally in a direction along the edges of the first region. Further, the metal interconnect is electrically connected at the innermost circumference with the drain region, and is connected at the outermost circumference to the source region or a ground potential.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a semiconductor substrate;   a transistor formed in the semiconductor substrate;   a first region formed in the semiconductor substrate and including a drain region of the transistor;   a second region formed in the semiconductor substrate and including a source region of the transistor;   a field insulation film formed in the semiconductor substrate, formed between the first region and the second region and surrounding the first region in a plan view; and   a first interconnect formed over the field insulation film,   wherein the field insulating film includes a silicon oxide film,   wherein the first interconnect is repeatedly provided while being turned back or in a spiral shape in the direction along the edges of the first region, and formed of titanium, titanium nitride, tantalum or tantalum nitride,   wherein the innermost circumference of the first inter connect is electrically connected with the drain region, and   wherein the outermost circumference of the first inter connect is electrically connected with the source region or a ground potential.   
     
     
         2 . A semiconductor device according to the  claim 1 , further comprising:
 a second interconnect formed over the field insulation film and extending from the first region to the second region,   wherein, in a plan view, the first and second interconnects do not overlap each other.   
     
     
         3 . A semiconductor device according to the  claim 2 , further including:
 an electrode pad formed over the field insulation film,   wherein the second interconnect is electrically connected with the electrode pad and the drain region.