Thin-film transistor, method of manufacturing the same, and method of manufacturing backplane for flat panel display

Abstract

Provided are a thin-film transistor (TFT), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (FPD). The method of manufacturing the TFT according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer.

What is claimed is: 
     
         1 . A thin-film transistor (TFT) comprising:
 a substrate;   a gate electrode disposed over the substrate;   an insulating layer disposed over the substrate to cover the gate electrode;   a surface treatment layer on an upper surface of the insulating layer, the surface treatment layer comprising nitrogen fluoride (NF 3 );   an oxide semiconductor layer disposed on the surface treatment layer and positioned to correspond to the gate electrode; and   source and drain electrodes disposed on the surface treatment layer and portions of the oxide semiconductor layer.   
     
     
         2 . The TFT of  claim 1 , wherein the insulating layer comprises a high dielectric oxide film. 
     
     
         3 . The TFT of  claim 3 , wherein the insulating layer comprises a hafnium oxide. 
     
     
         4 . The TFT of  claim 1 , wherein the oxide semiconductor layer comprises an amorphous metal oxide. 
     
     
         5 . The TFT of  claim 1 , wherein the oxide semiconductor layer comprises zinc-tin oxide.