Silicon carbide semiconductor devices

Abstract

Methods, systems, and devices are disclosed for thermal processing of silicon carbide semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen and phosphorous co-doped SiC epitaxial layer, in which the thermally growing the oxide layer results in at least partially consuming the nitrogen and phosphorous co-doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen and phosphorous between the SiC epitaxial layer and the oxide layer.

1 - 12 . (canceled) 
     
     
         13 . A SiC device, comprising:
 a SiC substrate;   a SiC epitaxial layer formed on the SiC substrate;   an oxide layer of an insulator material formed on the SiC epitaxial layer, the oxide layer including a surface layer including at least one of nitrogen, phosphorous, or boron to form an interface with the SiC epitaxial layer; and   one or more transistor structures over the oxide layer.   
     
     
         14 . The device as in  claim 13 , wherein the insulator material includes silicon oxide. 
     
     
         15 . The device as in  claim 13 , wherein the oxide layer is grown at a high temperature within a range from 900° C. to 1200° C. in an oxidizing environment. 
     
     
         16 . The device as in  claim 13 , wherein the interface with the SiC epitaxial layer is a surface layer of nitrogen and phosphorous co-doped SiC epitaxial layer. 
     
     
         17 . The device as in  claim 16 , wherein the surface layer of nitrogen and phosphorous co-doped SiC epitaxial layer has a thickness less than 500 nm. 
     
     
         18 . The device as in  claim 16 , wherein the nitrogen and phosphorous co-doped SiC material has a carrier concentration greater than 1×10 18  cm −3  for either or both the nitrogen and the phosphorous. 
     
     
         19 . The device as in  claim 16 , the interface further includes boron in addition to nitrogen and phosphorous.