Organic light-emitting display device and method of manufacturing the same

Abstract

Provided is an organic light-emitting display device that includes: a substrate; a first wiring that extends in a first direction on the substrate and comprises first and second portions with an opening therebetween; a second wiring that overlaps with the opening and extends in a second direction that crosses the first direction; an insulating film that covers the first wiring and the second wiring and comprises a first contact hole that exposes the first portion of the first wiring and a second contact hole that exposes the second portion; and a bridge electrode that is formed on the insulating film, is electrically connected to the first and second portions through the first and second contact holes, and comprises a transparent conductive oxide and a metal.

1 .- 8 . (canceled) 
     
     
         9 . A method of manufacturing an organic light-emitting display device, the method comprising:
 a first mask process on a substrate, forming a gate electrode and a first wiring that extends in a first direction and is connected to the gate electrode, and   the first wiring comprising first and second portions with an opening between the first and second portions;   a second mask process forming an active layer corresponding to the gate electrode;   a third mask process forming an etch stopper film that comprises holes for exposing edges of the active layer;   a fourth mask process forming source and drain electrodes on the etch stopper film and the source and drain electrodes contacting the active layer through the holes and a second wiring extending in a second direction crossing the first direction to overlap the opening;   a fifth mask process forming an insulating film that covers the source electrode, the drain electrode, and the second wiring and the insulating film comprising
 a first contact hole that exposes the first portion, 
 a second contact hole that exposes the second portion, and 
 a via hole that exposes one of the source electrode and the drain electrode; and 
   a sixth mask process on the insulating film forming
 a pixel electrode connected to one of the source electrode and the drain electrode through the via hole, and 
 a bridge electrode electrically connecting the first and second portions through the first and second contact holes, comprising a transparent conductive oxide and a metal, the bridge electrode formed on a region surrounding the first and second contact holes is formed on a same level. 
   
     
     
         10 . The method of  claim 9 , the active layer comprising a semiconductive oxide. 
     
     
         11 . The method of  claim 9 , further comprising a seventh mask process forming a pixel-defining film that comprises an opening exposing the pixel electrode on the insulating film. 
     
     
         12 . The method of  claim 11 , further comprising:
 forming an intermediate layer on the pixel electrode exposed through the opening; and   forming a facing electrode covering the intermediate layer on the pixel-defining film.   
     
     
         13 . The method of  claim 12 ,
 the sixth mask process further comprising forming a bus line having same material of the bridge electrode at a same level as the bridge electrode, and   the seventh mask process comprising forming the pixel-defining film that further comprises a hole exposing the bus line electrically connected to the facing electrode.   
     
     
         14 . The method of  claim 9 , the bridge electrode comprising:
 a first layer comprising ITO,   a second layer comprising Ag, and   a third layer comprising ITO.   
     
     
         15 . A method of manufacturing an organic light-emitting display device, the method comprising:
 a first mask process on a substrate, forming
 a gate electrode and 
 a first wiring extending in a first direction and connected to the gate electrode; 
   a second mask process forming an active layer corresponding to the gate electrode;   a third mask process forming an etch stopper film comprising a plurality of holes exposing edges of the active layer;   a fourth mask process on the etch stopper film,
 forming source and drain electrodes contacting the active layer through the plurality of holes, and 
 forming a second wiring extending in a second direction crossing the first direction, the second wiring comprising
 an opening overlapping the first wiring, and 
 first and second portions separated from each other by the opening; 
 
   a fifth mask process forming an insulating film comprising
 the source electrode, 
 the drain electrode, 
 the second wiring, 
 a first contact hole exposing the first portion, 
 a second contact hole exposing the second portion, and 
 a via hole exposing one of the source electrode and the drain electrode; and 
   a sixth mask process on the insulating film,
 forming a pixel electrode connected to one of the source electrode and the drain electrode through the via hole, and 
 forming a bridge electrode electrically connecting the first and second portions through the first and second contact holes, the bridge electrode comprising a transparent conductive oxide and a metal, the bridge electrode formed on a region surrounding the first and second contact holes is formed on a same level. 
   
     
     
         16 . The method of  claim 15 , the active layer comprising a semiconductive oxide. 
     
     
         17 . The method of  claim 15 , further comprising a seventh mask process forming a pixel-defining film comprising an opening exposing the pixel electrode on the insulating film. 
     
     
         18 . The method of  claim 17 , further comprising:
 forming an intermediate layer on the pixel electrode exposed through the opening; and   forming a facing electrode covering the intermediate layer on the pixel-defining film.   
     
     
         19 . The method of  claim 18 ,
 the sixth mask process further comprising forming a bus line having same material of the bridge electrode at a same level as the bridge electrode, and   the seventh mask process further comprising forming a pixel-defining film that further comprises a plurality of holes exposing the bus line electrically connected to the facing electrode.   
     
     
         20 . The method of  claim 15 , the bridge electrode comprising:
 a first layer comprising ITO,   a second layer comprising Ag, and   a third layer comprising ITO.