Solid-state imaging apparatus and imaging system

Abstract

A solid-state imaging apparatus, comprising a plurality of pixels arrayed on a substrate, and element isolation regions formed between the plurality of pixels on the substrate, wherein the plurality of pixels include a first pixel including a first color filter for passing light having a first wavelength, a second pixel including a second color filter for passing light having a second wavelength longer than the first wavelength, and a pixel for focus detection including a light-shielding pattern arranged on the photoelectric conversion portion to limit light entering the photoelectric conversion portion, and among the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is lower than that of a second region between the first pixel and the second pixel.

1 .- 8 . (canceled) 
     
     
         9 . A solid-state imaging apparatus, comprising:
 a plurality of pixels arrayed on a substrate and each including a photoelectric conversion portion; and   element isolation regions provided between the plurality of pixels on the substrate,   wherein the plurality of pixels include:
 a first pixel including a first color filter for passing light having a first wavelength, 
 a second pixel including a second color filter for passing light having a second wavelength longer than the first wavelength, 
 a third pixel including a third color filter for passing light having a third wavelength shorter than the first wavelength, and 
 a pixel for focus detection including a light-shielding pattern arranged on the photoelectric conversion portion to limit light entering the photoelectric conversion portion, and 
   wherein, among the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is lower than that of a second region between the first pixel and the second pixel and/or which is higher than that of a third region between the first pixel and the third pixel.   
     
     
         10 . The apparatus according to  claim 9 , wherein the first region meets
 (i) at least one of:
 having a width between pixels, which is smaller than that of the second region; 
 being shallower than the second region from the substrate; and 
 having an impurity concentration lower than that of the second region, and/or 
   (ii) at least one of:
 having a width between pixels, which is wider than that of the third region; 
 being deeper than the third region from the substrate; and 
 having an impurity concentration higher than that of the third region. 
   
     
     
         11 . The apparatus according to  claim 9 , wherein
 the first pixel is arranged in a position corresponding to a green pixel in a Bayer array,   the second pixel is arranged in a position corresponding to a red pixel in the Bayer array,   the third pixel is arranged in a position corresponding to a blue pixel in the Bayer array, and   the pixel for focus detection is arranged in a position corresponding to a red pixel and/or a blue pixel in the Bayer array.   
     
     
         12 . The apparatus according to  claim 9 , wherein
 the plurality of pixels further include a plurality of wiring layers, and   a light-shielding pattern is arranged in a wiring layer closest to the substrate among the plurality of wiring layers.   
     
     
         13 . The apparatus according to  claim 9 , wherein an isolation portion made of an insulator is formed on the element isolation region. 
     
     
         14 . An imaging system comprising:
 a solid-state imaging apparatus comprising:
 a plurality of pixels arrayed on a substrate and each including a photoelectric conversion portion; and 
 element isolation regions provided between the plurality of pixels on the substrate; and 
   a processing unit configured to process an output signal from the solid-state imaging apparatus,   wherein the plurality of pixels include
 a first pixel including a first color filter for passing light having a first wavelength, 
 a second pixel including a second color filter for passing light having a second wavelength longer than the first wavelength, 
 a third pixel including a third color filter for passing light having a third wavelength shorter than the first wavelength, and 
 a pixel for focus detection including a light-shielding pattern arranged on the photoelectric conversion portion to limit light entering the photoelectric conversion portion, and 
   wherein, among the element isolation regions, a first region between the pixel for focus detection and the first pixel has a potential barrier against a signal charge, which is lower than that of a second region between the first pixel and the second pixel, and/or, which is higher than that of a third region between the first pixel and the third pixel.