Nanostructures having low defect density and methods of forming thereof

Abstract

A method of forming nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.

1 . A semiconductor structure comprising a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough, the at least one aperture comprising at least one dimension of less than about 50 nm. 
     
     
         2 . The semiconductor structure of  claim 1 , wherein the pattern of self-assembled nucleic acids comprise a pattern of self-assembled ribonucleic acid (RNA) strands, deoxyribonucleic acid (DNA) strands, peptide nucleic acid (PNA) strands, or combinations thereof. 
     
     
         3 . The semiconductor structure of  claim 1 , wherein the at least one aperture in the pattern of self-assembled nucleic acids comprises at least one dimension of less than about 40 nm. 
     
     
         4 . The semiconductor structure of  claim 1 , wherein the at least one aperture in the pattern of self-assembled nucleic acids comprises at least one dimension of less than about 30 nm. 
     
     
         5 . The semiconductor structure of  claim 1 , wherein the at least one aperture in the pattern of self-assembled nucleic acids comprises at least one dimension of less than about 20 nm. 
     
     
         6 . The semiconductor structure of  claim 1 , wherein the at least one aperture in the pattern of self-assembled nucleic acids comprises at least one dimension of less than about 10 nm. 
     
     
         7 . A semiconductor structure comprising a pattern of self-assembled nucleic acids on a substrate, the pattern of self-assembled nucleic acids comprising at least one aperture therethrough and the at least one aperture comprising at least one dimension of less than about 50 nm. 
     
     
         8 . The semiconductor structure of  claim 7 , wherein the at least one aperture extends into the substrate. 
     
     
         9 . The semiconductor structure of  claim 8 , further comprising a nanocomponent selected from the group consisting of a silicon nanowire, a gold nanoparticle, a semiconductive quantum dot, a fluorescent quantum dot, and combinations thereof in the at least one aperture. 
     
     
         10 . The semiconductor structure of  claim 7 , wherein the substrate comprises gold, silver, silicon dioxide, or aluminum. 
     
     
         11 . The semiconductor structure of  claim 7 , wherein the self-assembled nucleic acids comprise self-assembled multi-stranded nucleic acids, self-assembled scaffolded nucleic acids, self-assembled single-stranded nucleic acids, or combinations thereof. 
     
     
         12 . A semiconductor structure comprising:
 a substrate comprising at least one feature having at least one feature dimension of less than about 50 nm, the at least one feature formed on the substrate by a process comprising:
 forming a mask comprising a pattern of self-assembled nucleic acids on a substrate; 
 exposing the pattern of self-assembled nucleic acids on the substrate to at least one repair enzyme to repair defects in the self-assembled nucleic acids; and 
 forming the at least one feature on portions of the substrate exposed through the mask. 
   
     
     
         13 . The semiconductor structure of  claim 12 , wherein the at least one feature dimension is less than about 40 nm. 
     
     
         14 . The semiconductor structure of  claim 12 , wherein the at least one feature dimension is less than about 30 nm. 
     
     
         15 . The semiconductor structure of  claim 12 , wherein the at least one feature dimension is less than about 20 nm. 
     
     
         16 . The semiconductor structure of  claim 12 , wherein the at least one feature dimension is less than about 10 nm. 
     
     
         17 . The semiconductor structure of  claim 12 , wherein the at least one feature comprises at least one of a silicon nanowire, a gold nanoparticle, a semiconductive quantum dot, or a fluorescent quantum dot.