Semiconductor Device Having Ridges Running in Different Directions

Abstract

A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate, the first and second ridges running in a first direction. A body region is disposed in a portion of the semiconductor substrate between the first ridge and the second ridge, the first and second ridges being connected with the body region. A plurality of further ridges are formed in the body region, the further ridges extending in a second direction intersecting the first direction. A gate electrode is adjacent to the body region, the gate electrode running in the first direction and being disposed at at least two sides of the further ridges.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first ridge and a second ridge extending from a first main surface of a semiconductor substrate, the first and second ridges running in a first direction;   a body region disposed in a portion of the semiconductor substrate between the first ridge and the second ridge, the first and second ridges being connected with the body region;   a plurality of further ridges formed in the body region, the further ridges extending in a second direction intersecting the first direction; and   a gate electrode adjacent to the body region, the gate electrode running in the first direction, the gate electrode being disposed at at least two sides of the further ridges.   
     
     
         2 . The semiconductor device of  claim 1 , wherein a source region is disposed in the first ridge and a drain region is disposed in the second ridge. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first and the second ridges each comprise a semiconductor material and are doped with dopants of a first conductivity type. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the first ridge comprises a material selected from the group consisting of polycrystalline silicon, monocrystalline silicon, a semiconductor material and a conductive material. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the second ridge comprises monocrystalline silicon. 
     
     
         6 . The semiconductor device of  claim 1 , wherein a width of the first ridge is different from a width of the second ridge, the widths being measured perpendicularly with respect to the first direction. 
     
     
         7 . The semiconductor device of  claim 1 , further comprising additional first and second ridges, additional body regions and additional gate electrodes, wherein the first ridges are held at a source potential, wherein the second ridges are held at a drain potential, and wherein the gate electrodes are held at a gate potential. 
     
     
         8 . The semiconductor device of  claim 3 , wherein the first ridge is doped with dopants of the first conductivity type along an entire height of the first ridge. 
     
     
         9 . The semiconductor device of  claim 3 , wherein the second ridge is doped with dopants of the first conductivity type along an entire height of the second ridge. 
     
     
         10 . The semiconductor device of  claim 2 , wherein the source region extends to a bottom side of the first ridge. 
     
     
         11 . The semiconductor device of  claim 2 , wherein the drain region extends to a bottom side of the second ridge.