Stacked packaging using reconstituted wafers

Abstract

An exemplary implementation of the present disclosure includes a stacked package having a top die from a top reconstituted wafer situated over a bottom die from a bottom reconstituted wafer. The top die and the bottom die are insulated from one another by an insulation arrangement. The top die and the bottom die are also interconnected through the insulation arrangement. The insulation arrangement can include a top molding compound that flanks the top die and a bottom molding compound that flanks the bottom die. The top die and the bottom die can be interconnected through at least the, top molding compound. Furthermore, the top die and the bottom die can be interconnected through a conductive via that extends within the insulation arrangement.

1 . A stacked package comprising:
 a top die from a top reconstituted wafer situated over a bottom die from a bottom reconstituted wafer;   said top die and said bottom die being insulated from one another by an insulation arrangement;   said top die and said bottom die being interconnected through said insulation arrangement.   
     
     
         2 . The stacked package of  claim 1 , wherein said top die and said bottom die are interconnected through a conductive via. 
     
     
         3 . The stacked package of  claim 2 , wherein said conductive via extends within said insulation arrangement. 
     
     
         4 . The stacked package of  claim 1 , wherein said top die has a top redistribution layer, and said bottom die has a bottom redistribution layer that is connected to said top redistribution layer. 
     
     
         5 . The method of  claim 1  wherein said insulation arrangement comprises a top molding compound that flanks said top die and a bottom molding compound that flanks said bottom die. 
     
     
         6 . The method of  claim 5 , wherein said top molding compound is situated over said bottom molding compound. 
     
     
         7 . The method of  claim 1 , wherein said insulation arrangement comprises a top molding compound that flanks said to die, said top die and said bottom die being interconnected through at least said top molding compound. 
     
     
         8 . A method for manufacturing a stacked package, said method comprising:
 stacking a top reconstituted wafer having a top die over a bottom reconstituted wafer having a bottom die to form a reconstituted wafer stack;   interconnecting said top die of said top reconstituted wafer and said bottom die of said bottom reconstituted wafer through an insulation arrangement;   singulating said reconstituted wafer stack to form said stacked package.   
     
     
         9 . The method of  claim 8 , wherein said interconnecting comprises forming a conductive via through said insulation arrangement. 
     
     
         10 . The method of  claim 8 , wherein said insulation arrangement comprises a top molding compound that flanks said top die of said top reconstituted wafer and a bottom molding compound that flanks said bottom die of said bottom reconstituted wafer. 
     
     
         11 . The method of  claim 10 , wherein said top molding compound is situated over said bottom molding compound. 
     
     
         12 . The method of  claim 8 , further comprising forming a package terminal for connection to said top die of said top reconstituted wafer and said bottom die of said bottom reconstituted wafer prior to said singulating. 
     
     
         13 . The method of  claim 8 , wherein said stacking comprises adhering said top reconstituted wafer to said bottom reconstituted wafer using a passivation layer. 
     
     
         14 . A method for manufacturing a stacked package, said method comprising:
 stacking a top reconstituted wafer having a top die over a bottom reconstituted wafer having a bottom die to form a reconstituted wafer stack, said top die having a top redistribution layer, and said bottom die having a bottom redistribution layer;   interconnecting said top die of said top reconstituted wafer and said bottom die of said bottom reconstituted wafer by connecting said top redistribution layer to said bottom redistribution layer;   singulating said reconstituted wafer stack to form said stacked package.   
     
     
         15 . The method of  claim 14 , wherein said interconnecting comprises forming a conductive via through said top redistribution layer. 
     
     
         16 . The method of  claim 14 , wherein said interconnecting comprises forming a conductive via through said bottom redistribution layer. 
     
     
         17 . The method of  claim 14 , wherein said interconnecting is through an insulation arrangement. 
     
     
         18 . The method of  claim 14 , further comprising forming a package terminal for connection to said top die and said bottom die prior to said singulating. 
     
     
         19 . The method of  claim 14 , wherein said stacking comprises adhering said top reconstituted wafer to said bottom reconstituted wafer using a passivation layer. 
     
     
         20 . The method of  claim 19 , wherein said passivation layer is a bottom redistribution layer passivation.