Etch back processes of bonding material for the manufacture of through-glass vias

Abstract

A method for manufacturing vias in a glass substrate includes bonding, through a bonding layer, a first face of the glass substrate including a plurality of holes to a first face of a glass carrier. The bonding layer has a thickness t between the first face of the glass substrate and the first face of the glass carrier and extends into at least some of the plurality of holes to a depth h from the first face of the glass substrate. The method includes etching back the bonding layer to a depth d through the plurality of holes in the glass substrate. The depth d is less than the sum of the thickness t and the depth h. The method can include filling the plurality of holes with an electrically conductive material, and de-bonding the glass substrate from the bonding layer and the glass carrier.

1 - 20 . (canceled) 
     
     
         21 . An assembly comprising:
 a substrate having a first face and a second face;   a carrier;   a bonding layer positioned between the first face of the substrate and a face of the carrier to bond the substrate and carrier;   a plurality of vias extending through the substrate from the first face of the substrate to the second face of the substrate and into at least a portion of the bonding layer.   
     
     
         22 . The assembly of  claim 21 , wherein the bonding layer is capable of being de-bonded from the substrate. 
     
     
         23 . The assembly of  claim 22 , wherein the bonding layer is an ultraviolet curable adhesive. 
     
     
         24 . The assembly of  claim 21 , wherein the vias are filled with an electrically conductive material. 
     
     
         25 . The assembly of  claim 24 , wherein the electrically conductive material is selected from a group consisting of copper, silver, aluminum, nickel, alloys thereof, and combinations thereof. 
     
     
         26 . The assembly of  claim 24 , wherein the electrically conductive material comprises copper-containing material. 
     
     
         27 . The assembly of  claim 21 , wherein the plurality of vias extend through an entire thickness of the bonding layer. 
     
     
         28 . The assembly of  claim 21 , wherein the plurality of vias extend through less than an entire thickness of the bonding layer. 
     
     
         29 . The assembly of  claim 21 , wherein the substrate is glass. 
     
     
         30 . The assembly of  claim 21 , wherein the carrier is glass. 
     
     
         31 . The assembly of  claim 21 , wherein each of the plurality of vias is pillar-shaped. 
     
     
         32 . The assembly of  claim 21 , wherein each of the plurality of vias is mushroom-shaped. 
     
     
         33 . The assembly of  claim 21 , wherein the substrate has a thickness of less than or equal to 100 um.