Forming memory using high power impulse magnetron sputtering

Abstract

Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.

1 - 20 . (canceled) 
     
     
         21 . A system for processing memory, comprising:
 a structure; and   a target facing toward the structure and configured to form a crystallized resistive random access memory (RRAM) cell material on the structure, wherein:
 the target is configured to form the crystallized RRAM cell material on the structure in a conventional physical vapor deposition (PVD) chamber having a temperature of approximately 400 degrees Celsius or less; and 
 the target is configured to form the crystallized RRAM cell material on the structure such that the crystallized RRAIVI cell material on the structure has an ionization of at least 80%. 
   
     
     
         22 . The system of  claim 21 , wherein the target is configured to:
 receive a first pulse of at least 1 kilowatt for a duration of approximately 1 to 300 microseconds; and   receive a second pulse of at least 1 kilowatt for a duration of approximately 1 to 300 microseconds.   
     
     
         23 . The system of  claim 21 , wherein the target has a surface facing toward the structure. 
     
     
         24 . The system of  claim 21 , wherein the structure is a damascene structure. 
     
     
         25 . The system of  claim 21 , wherein the crystallized RRAM cell material is Pr (1-x) Ca x MnO 3  (PCMO). 
     
     
         26 . The system of  claim 21 , wherein the target is approximately 3 to 4 inches from the structure. 
     
     
         27 . The system of  claim 21 , wherein the target is configured to form the crystallized RRAM cell material on the structure such that the crystallized RRAM cell material on the structure has a thickness of approximately 40 to 70 Angstroms. 
     
     
         28 . The system of  claim 21 , wherein the crystallized RRAM cell material includes grain boundaries vertical to the structure. 
     
     
         29 . The system of  claim 21 , wherein the crystallized RRAM cell material does not include grain boundaries vertical to the structure. 
     
     
         30 . A system for processing memory, comprising:
 a target having a resistive memory material and configured to:
 receive a number of pulses, wherein each pulse has a power of at least 1 kilowatt and a duration of approximately 1 to 300 microseconds; and 
 form plasma comprising the resistive memory material in response to receiving the number of pulses; and 
   a memory structure configured to receive the resistive memory material from the plasma, wherein the resistive memory material received by the structure is crystallized.   
     
     
         31 . The system of  claim 30 , wherein the resistive memory material is a metal oxide. 
     
     
         32 . The system of  claim 31 , wherein the metal oxide is an alkaline metal oxide. 
     
     
         33 . The system of  claim 31 , wherein the metal oxide is a refractive metal oxide. 
     
     
         34 . The system of  claim 30 , wherein each pulse is separated by a duration of approximately 100 milliseconds. 
     
     
         35 . The system of  claim 30 , wherein the target faces the memory structure. 
     
     
         36 . The system of  claim 30 , wherein the target is horizontally oriented. 
     
     
         37 . The system of  claim 30 , wherein each pulse has an equal amount of power and an equal duration. 
     
     
         38 . The system of  claim 30 , wherein the memory structure is a substrate. 
     
     
         39 . A system for processing memory, comprising:
 a target having a resistive memory material and configured to:
 receive a number of pulses, wherein:
 each respective pulse has a duration of approximately 1 to 300 microseconds; and 
 each respective pulse has a constant amount of power of at least 1megawatt for the duration of the pulse; and 
 
 form plasma comprising the resistive memory material in response to receiving the number of pulses; and 
   a memory structure configured to receive the resistive memory material from the plasma such that the resistive memory material from the plasma forms on the structure, wherein the resistive memory material formed on the structure has a thickness of less than 100 Angstroms.   
     
     
         40 . The system of  claim 39 , wherein the resistive memory material formed on the structure is crystallized.