Photoresist removal

Abstract

Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

1 .- 24 . (canceled) 
     
     
         25 . A cleaning solution comprising at least one strong base, at least one oxidant, and at least one polar solvent, wherein said at least one strong base comprises a species having the formula NR 1 R 2 R 3 R 4 OH, where R 1 , R 2 , R 3 , and R 4  are each one of hydrogen, alkyl or substituted alkyl groups, wherein said at least one oxidant comprises peroxides, amine-N-oxides, perborate salts, persulfate salts, percarbonate salts, and combinations thereof, and wherein said at least one polar solvent comprises a polar species selected from the group consisting of water, an alcohol, ethylene glycol, propylene glycol, glycol ethers thereof, an amide, and a carbonate, wherein said solution is useful for removing post-etch photoresist residue from a semiconductor substrate having same thereon. 
     
     
         26 . The cleaning solution of  claim 25 , wherein the amount of each component is
 about 20 to about 95 wt % of at least one polar solvent;   about 0.1 to about 30 wt % of at least one strong base; and   about 1 to about 30 wt % of at least one oxidant,   based on the total weight of the cleaning solution.   
     
     
         27 . The cleaning solution of  claim 26 , wherein the amount of the at least one strong base is no more than 3.5 wt % and the pH is greater than about 11.5. 
     
     
         28 . The cleaning solution of  claim 25 , wherein the at least one strong base comprises a species selected from the group consisting of ammonium hydroxide, tetramethylammonium hydroxide (TMAH), choline hydroxide, and combinations thereof. 
     
     
         29 . The cleaning solution of  claim 25 , wherein said polar solvent comprises water. 
     
     
         30 . The cleaning solution of  claim 25 , wherein the at least one oxidant comprises an amine-N-oxide having the formula: 
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  may be hydrogen, methyl, further substituted or unsubstituted alkyl groups or may form two ends of an alkyl chain, and R 3  may be methyl, further substituted or unsubstituted alkyl groups or may form two ends of an alkyl chain. 
     
     
         31 . The cleaning solution of  claim 30 , wherein said amine-N-oxide comprises N-methylmorpholine-N-oxide. 
     
     
         32 . The cleaning solution of  claim 25 , wherein the at least one oxidant comprises a peroxide selected from the group consisting of hydrogen peroxide, substituted alkyl peroxides, and substituted aryl peroxides. 
     
     
         33 . The cleaning solution of  claim 25 , further comprising at least one chelator selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, benzotriazole, polyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-1,2,4-triazole, 1-amino-5-methyl-1,2,3-triazole, hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 3-amino-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 5-phenylthiol-benzotriazole, halo-benzotriazoles, napthotriazole, 2-mercaptobenzoimidizole, 2-mercaptobenzothiazole, 5-aminotetrazole, 5-amino-1,3,4-triadiazole-2-thiol, thiazole, triazine, methyltetrazole, 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, mercaptobenzothiazole, imidazoline thione, mercaptobenzoimidazole, 4-methyl-4H-1,2,4-triazole-3-thiol, benzothiazole, tritolyl phosphate, indiazole, guanine, adenine, glycerol, thioglycerol, nitrilotriacetic acid, salicylamide, iminodiacetic acid, benzoguanamine, melamine, thiocyranuric acid, anthranilic acid, 8-hydroxyquinoline, 5-carboxylic acid-benzotriazole, 3-mercaptopropanol, boric acid, and iminodiacetic acid. 
     
     
         34 . The cleaning solution of  claim 25 , further comprising a co-solvent, wherein said co-solvent is one of an alkylamine, an alkanolamine, a glycol, and a glycol ether. 
     
     
         35 . The cleaning solution of  claim 34 , wherein the co-solvent is selected from the group consisting of N,N-dimethyldiglycolamine, 1,8-diazabicyclo[5.4.0]undecene, aminopropylmorpholine, triethanolamine, methylethanolamine, ethylene glycol, diethylene glycol, propylene glycol, neopentyl glycol, di(ethylene glycol)monoethyl ether, di(propylene glycol)propyl ether, ethylene glycol phenyl ether, di(propylene glycol)butyl ether, di(ethylene glycol)monobutyl ether, polyglycol ethers, and combinations thereof. 
     
     
         36 . The cleaning solution of  claim 25 , further comprising a surfactant selected from the group consisting of fluoroalkyl surfactants, polyethylene glycols, polypropylene glycols, polyethylene glycol ethers, polypropylene glycol ethers, carboxylic acid salts, dodecylbenzenesulfonic acid, salts of dodecylbenzenesulfonic acid, polyacrylate polymers, silicone polymers, modified silicone polymers, acetylenic diols, modified acetylenic diols, alkylammonium salts, modified alkylammonium salts, and combinations thereof. 
     
     
         37 . A method to remove post-etching photoresist residue from a semiconductor substrate comprising contacting the semiconductor substrate with a cleaning solution for a sufficient amount of time to effect substantial cleaning of the semiconductor substrate, wherein the cleaning solution comprises at least one strong base, at least one oxidant, and at least one polar solvent, wherein said at least one strong base comprises a species having the formula NR 1 R 2 R 3 R 4 OH, where R 1 , R 2 , R 3 , and R 4  are each one of hydrogen, alkyl or substituted alkyl groups, wherein said at least one oxidant comprises peroxides, amine-N-oxides, perborate salts, persulfate salts, percarbonate salts, and combinations thereof, and wherein said at least one polar solvent comprises a polar species selected from the group consisting of water, an alcohol, ethylene glycol, propylene glycol, glycol ethers thereof, an amide, and a carbonate. 
     
     
         38 . The method of  claim 37 , wherein the amount of the at least one strong base is no more than 3.5 wt % and the pH is greater than about 11.5. 
     
     
         39 . The method of  claim 37 , wherein said polar solvent comprises water. 
     
     
         40 . The method of  claim 37 , wherein the cleaning solution comprises amine-N-oxide having the formula: 
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  may be hydrogen, methyl, further substituted or unsubstituted alkyl groups or may form two ends of an alkyl chain, and R 3  may be methyl, further substituted or unsubstituted alkyl groups or may form two ends of an alkyl chain. 
     
     
         41 . The method of  claim 40 , wherein said amine-N-oxide comprises N-methylmorpholine-N-oxide. 
     
     
         42 . The method of  claim 37 , wherein the cleaning solution comprises a peroxide selected from the group consisting of hydrogen peroxide, substituted alkyl peroxides, and substituted aryl peroxides. 
     
     
         43 . The method of  claim 37 , wherein the at least one strong base comprises a species selected from the group consisting of ammonium hydroxide, tetramethylammonium hydroxide (TMAH), choline hydroxide, and combinations thereof.