Semiconductor device and manufacturing method thereof

Abstract

A method for manufacturing a semiconductor device, includes providing a wiring substrate having a first surface and a second surface, the first surface being provided with a plurality of leads, after the providing of the wiring substrate, arranging a semiconductor chip with a main surface, a plurality of electrode pads formed at the main surface, and a back surface opposite to the main surface, over the first surface of the wiring substrate such that the back surface of the semiconductor chip is opposed to the first surface of the wiring substrate, after the arranging of the semiconductor chip, electrically coupling the electrode pads formed along three out of four sides of the main surface of the semiconductor chip to the leads disposed at the first surface of the wiring substrate via a plurality of metal wires, and after the electrically coupling of the electrode pads, forming a seal body over the first surface of the wiring substrate.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device, comprising:
 providing a wiring substrate having a first surface and a second surface opposite thereto, the first surface being formed in a rectangular shape and provided with a plurality of leads;   after the providing of the wiring substrate, arranging a semiconductor chip with a quadrilateral main surface, a plurality of electrode pads formed at the main surface, and a back surface opposite to the main surface, over the first surface of the wiring substrate such that the back surface of the semiconductor chip is opposed to the first surface of the wiring substrate;   after the arranging of the semiconductor chip, electrically coupling the electrode pads formed along three out of four sides of the main surface of the semiconductor chip to the leads disposed at the first surface of the wiring substrate via a plurality of metal wires; and   after the electrically coupling of the electrode pads, forming a seal body over the first surface of the wiring substrate by sealing the semiconductor chip and the metal wires with resin,   wherein the forming of the seal body comprises charging a resin for sealing from one side opposed to one of four sides of the main surface of the semiconductor chip not having the metal wires disposed thereat to thereby form the seal body.   
     
     
         2 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the semiconductor chip includes a memory circuit and a logic circuit. 
     
     
         3 . The method for manufacturing a semiconductor device according to  claim 2 , wherein the metal wires disposed in parallel along a short side of the first surface of the wiring substrate are arranged at two respective opposed sides of the main surface of the semiconductor chip,
 wherein the leads are provided in a plurality of lines along the short side of the first surface outside the two respective opposed sides of the chip, and   wherein the metal wires are electrically coupled to the leads.   
     
     
         4 . The method for manufacturing a semiconductor device according to  claim 2 , wherein the metal wires are arranged at one side intersecting the two opposed sides of the main surface of the semiconductor chip,
 wherein the leads are arranged in one line outside the intersecting one side at the first surface of the wiring substrate, and   wherein the metal wires are electrically coupled to the leads.   
     
     
         5 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the plurality of leads are provided in:
 a plurality of lines at the first surface of the wiring substrate along a short side of the first surface outside respective sides of any one of two pairs of the opposed sides of the main surface of the semiconductor chip; and   a line formed along a long side of the first surface, a distance between the short side of the first surface and the plurality of lines being greater than a distance between the long side of the first surface and the line formed along the long side of the first surface, and   wherein the metal wires are electrically coupled to the leads.