Pattern formation method, active-light-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device

Abstract

The pattern formation method includes the following steps (i) to (iii): (i) a step in which an active-light-sensitive or radiation-sensitive resin composition is used to form a film whose solubility in a developer increases as the exposure dose increases from an unexposed state but then decreases once a predetermined exposure dose has been reached; (ii) a step in which the film is exposed; and (iii) a step in which a developer containing an organic solvent in the amount of 80% by mass or more with respect to the total amount of the developer is used to develop the exposed film.

What is claimed is: 
     
         1 . A pattern formation method comprising the following steps (i) to (iii):
 (i) a step of forming a film whose solubility in a developer increases as the exposure dose increases from an unexposed state but then decreases once a predetermined exposure dose has been reached by using an active-light-sensitive or radiation-sensitive resin composition;   (ii) a step of exposing the film; and   (iii) a step of developing the exposed film by using a developer containing an organic solvent in the amount of 80% by mass or more with respect to the total amount of the developer.   
     
     
         2 . The pattern formation method according to  claim 1 ,
 wherein the exposure is carried out through a mask to form a pattern having a narrower pitch than the pitch of the mask.   
     
     
         3 . The pattern formation method according to  claim 2 ,
 wherein the pitch of the pattern is half the pitch of the mask or less.   
     
     
         4 . The pattern formation method according to  claim 1 ,
 wherein the active-light-sensitive or radiation-sensitive resin composition includes a resin (A) having a repeating unit (P1) containing a group capable of decomposing by an action of an acid to generate a polar group, and a compound (B) capable of generating an acid upon irradiation with active light or radiation.   
     
     
         5 . The pattern formation method according to  claim 4 ,
 wherein the active-light-sensitive or radiation-sensitive resin composition further includes an ionic compound (S) containing an anionic moiety having a pKa of 0.0 to 10.0.   
     
     
         6 . The pattern formation method according to  claim 5 ,
 wherein the resin (A) is a resin further having a repeating unit (P2) containing an acid group.   
     
     
         7 . The pattern formation method according to  claim 6 ,
 wherein the pKa of the repeating unit (P2) is 0.0 to 10.0, and when the pKa of the repeating unit (P2) is higher than the pKa of the anionic moiety of the ionic compound (S), the difference between the pKa of the repeating unit (P2) and the pKa of the anionic moiety of the ionic compound (S) is 2.0 or less.   
     
     
         8 . The pattern formation method according to  claim 4 ,
 wherein the resin (A) is a resin further having a repeating unit (P3) containing an ionic group obtained by forming a salt with an acid group.   
     
     
         9 . The pattern formation method according to  claim 5 ,
 wherein the anionic moiety is represented by any one of the following General Formulae (a1) to (a5):   
       
         
           
           
               
               
           
         
         in the general formulae, 
         R 1 , R 2 , R 3 , R 4 , and R 5  each independently represent a hydrogen atom or an organic group, 
         R 3 's, which are present in plural numbers, may be the same as or different from each other and R 3 's may be bonded to each other to form a ring, 
         R 4 's, which are present in plural numbers, may be the same as or different from each other and R 4 's may be bonded to each other to form a ring, and 
         R 5 's, which are present in plural numbers, may be the same as or different from each other and R 5 's may be bonded to each other to form a ring. 
       
     
     
         10 . The pattern formation method according to  claim 5 ,
 wherein the cationic moiety contained in the ionic compound (S) is represented by any one of the following General Formulae (b1) to (b7):   
       
         
           
           
               
               
           
         
         in the general formulae, 
         R 11 , R 21 , R 31 , R 41 , R 51 , R 61 , R 71 , and R 72  each independently represent a hydrogen atom or an organic group, 
         R 11 's, which are present in plural numbers, may be the same as or different from each other and R 11 's may be bonded to each other to form a ring, 
         R 21 's, which are present in plural numbers, may be the same as or different from each other and R 21 's may be bonded to each other to form a ring, 
         R 31 's, which are present in plural numbers, may be the same as or different from each other and R 31 's may be bonded to each other to form a ring, 
         R 41 's, which are present in plural numbers, may be the same as or different from each other and R 41 's may be bonded to each other to form a ring, 
         R 51 's, which are present in plural numbers, may be the same as or different from each other and R 51 's may be bonded to each other to form a ring, and 
         R 61 's, which are present in plural numbers, may be the same as or different from each other and R 61 's may be bonded to each other to form a ring. 
       
     
     
         11 . The pattern formation method according to  claim 1 ,
 wherein the exposure is liquid immersion exposure.   
     
     
         12 . An active-light-sensitive or radiation-sensitive resin composition, which forms a film whose solubility in a developer increases as the exposure dose increases from an unexposed state but then decreases once a predetermined exposure dose has been reached. 
     
     
         13 . The active-light-sensitive or radiation-sensitive resin composition according to  claim 12 , comprising a resin (A) having a repeating unit (P1) containing a group capable of decomposing by an action of an acid to generate a polar group, and a compound (B) capable of generating an acid upon irradiation with active light or radiation. 
     
     
         14 . The active-light-sensitive or radiation-sensitive resin composition according to  claim 13 , further comprising an ionic compound (S) containing an anionic moiety having a pKa of 0.0 to 10.0. 
     
     
         15 . The active-light-sensitive or radiation-sensitive resin composition according to  claim 13 ,
 wherein the resin (A) is a resin further having a repeating unit (P2) containing an acid group.   
     
     
         16 . The active-light-sensitive or radiation-sensitive resin composition according to  claim 15 ,
 wherein the pKa of the repeating unit (P2) is 0.0 to 10.0, and when the pKa of the repeating unit (P2) is higher than the pKa of the anionic moiety of the ionic compound (S), the difference between the pKa of the repeating unit (P2) and the pKa of the anionic moiety of the ionic compound (S) is 2.0 or less.   
     
     
         17 . The active-light-sensitive or radiation-sensitive resin composition according to  claim 13 ,
 wherein the resin (A) is a resin further having a repeating unit (P3) containing an ionic group obtained by forming a salt with an acid group.   
     
     
         18 . A resist film formed by using the active-light-sensitive or radiation-sensitive resin composition according to  claim 12 . 
     
     
         19 . A method for manufacturing an electronic device, comprising the pattern formation method according to  claim 1 . 
     
     
         20 . An electronic device manufactured by the method for manufacturing an electronic device according to  claim 19 .