Image sensor, method for manufacturing the same, and image processing device having the image sensor

Abstract

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

What is claimed is: 
     
         1 . A method of forming an image sensor, comprising:
 forming a first layer having a plurality of first photodiodes and a plurality of second photodiodes on a semiconductor substrate, the first photodiodes configured to detect light of a first wavelength and the second photodiodes configured to detect light of a second wavelength including positioning the first photodiodes and the second photodiodes alternately with each of the first photodiodes positioned adjacent to a second photodiode and vice versa; and   forming a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength,   wherein the organic photodiodes are skewed with respect to alignment with the first photodiodes and the second photodiodes when viewed perpendicularly to the semiconductor substrate.   
     
     
         2 . The method of  claim 1 , further including forming a circuit part configured to read the detected light of the first layer and positioned between the first layer and the second layer. 
     
     
         3 . The method of  claim 1 , further including positioning the semiconductor substrate in between a circuit part configured to read the detected light of the first layer and the second layer. 
     
     
         4 . The method of  claim 1 , including:
 forming color filters over the semiconductor substrate; and   forming photo-electric conversion regions of the organic material on pixel electrodes.   
     
     
         5 . The method of  claim 1 , including forming a common electrode on the photo electric conversion region of the organic material. 
     
     
         6 . A method of processing image detection data, comprising:
 each pixel having four overlapped sections, each section having overlapped one pixel on the first layer and one pixel on the second layer, with data detected represented by G′=GS/4; B′=B 1 S/4; and R′=avg(R 2 S/4+R 1 S/4), wherein G′ represents ¼ of the entire G pixel, B′ is ¼ of the blue pixel B 1  and R′ is the combination and average of the ¼ regions of R 1  and R 2 .   
     
     
         7 . The method of  claim 6 , wherein each section is ¼ the area of a photodiode.