Slurry compounds and methods of fabricating semiconductor devices using the same

Abstract

Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.

What is claimed is: 
     
         1 . A slurry compound comprising:
 a polishing particle;   an oxidizing agent comprising at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide; and   a polishing accelerator.   
     
     
         2 . The slurry compound of  claim 1 , wherein the polishing particle comprises colloidal ceria (CeO 2 ) particles. 
     
     
         3 . The slurry compound of  claim 1 , wherein the polishing particle has a size in a range from about 30 nm to about 80 nm. 
     
     
         4 . The slurry compound of  claim 1 , wherein the oxidizing agent is present in an amount in a range from about 0.2 wt % to about 0.7 wt % with respect to a total weight of the slurry compound. 
     
     
         5 . The slurry compound of  claim 1 , wherein the oxidizing agent comprises at least one of hydrogen peroxide, ammonium perchlorate, sodium chlorate, sodium chlorite, and ferric nitrate. 
     
     
         6 . The slurry compound of  claim 1 , wherein the polishing accelerator is adsorbed on a surface of a metal. 
     
     
         7 . The slurry compound of  claim 1 , wherein the polishing accelerator comprises at least one amino acid selected from the group consisting of histidine, glycine, glutamine, leucine, methionine, phenylalanine, tryptophan, and valine. 
     
     
         8 . The slurry compound of  claim 1 , wherein the polishing accelerator comprises at least one selected from the group consisting of imidazole, imidazolium, chloride, pyridine, tetrazoles, histamine, 1,3-dimethylxanthine, 6-mercaptopurine, 1H-1,2,3-triazole, 1H-1,2,4-triazole, poly-[2,2′-(m-phenylen)-5,5′-bisbenzimidazole], 1H-pyrrole, 1,3-oxazole, 1,3-thiazole, pyrazole, 1-methylimidazole, and 4-methyl-1H-imidazole. 
     
     
         9 . A method of fabricating a semiconductor device, comprising:
 forming metal lines on a substrate;   forming an SOH organic layer on the metal lines to fill gaps between the metal lines;   performing a polishing process on the SOH organic layer to expose a top surface of the metal lines and form SOH organic patterns between the metal lines;   forming a thin film on the metal lines and the SOH organic patterns; and   selectively removing the SOH organic patterns to form air gaps between the metal lines,   wherein the polishing process is performed using a slurry compound comprising (a) a polishing particle, (b) an oxidizing agent containing at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and (c) a polishing accelerator.   
     
     
         10 . The method of  claim 9 , wherein, during the polishing process on the SOH organic layer, the polishing accelerator of the slurry compound is adsorbed on a top surface of the metal lines. 
     
     
         11 . The method of  claim 9 , wherein the polishing particle comprises colloidal ceria (CeO 2 ) particles. 
     
     
         12 . The method of  claim 9 , wherein the polishing particle has a size in a range from about 30 nm to about 80 nm. 
     
     
         13 . The method of  claim 9 , wherein the oxidizing agent is present in an amount in a range from about 0.2 wt % to about 0.7 wt % with respect to a total weight of the slurry compound. 
     
     
         14 . The method of  claim 9 , wherein the oxidizing agent comprises at least one of hydrogen peroxide, ammonium perchlorate, sodium chlorate, sodium chlorite, or ferric nitrate. 
     
     
         15 . The method of  claim 9 , wherein the polishing accelerator comprises at least one amino acid selected from the group consisting of histidine, glycine, glutamine, leucine, methionine, phenylalanine, tryptophan, and valine. 
     
     
         16 . The method of  claim 9 , wherein the polishing accelerator comprises at least one selected from the group consisting of imidazole, imidazolium, chloride, pyridine, tetrazoles, histamine, 1,3-dimethylxanthine, 6-mercaptopurine, 1H-1,2,3-triazole, 1H-1,2,4-triazole, poly-[2,2′-(m-phenylen)-5,5′-bisbenzimidazole], 1H-pyrrole, 1,3-oxazole, 1,3-thiazole, pyrazole, 1-methylimidazole, and 4-methyl-1H-imidazole. 
     
     
         17 . A slurry compound comprising:
 a colloid-type ceria (CeO 2 ) particle;   a nitrate oxidizing agent; and   an azole polishing accelerator.   
     
     
         18 . The slurry compound of  claim 17 , wherein the nitrate oxidizing agent is ferric nitrate (FeNO 3 ). 
     
     
         19 . The slurry compound of  claim 17 , wherein the azole polishing accelerator is imidazole. 
     
     
         20 . The slurry compound of  claim 17 , wherein the nitrate oxidizing agent is present in an amount from about 0.2 wt % to about 0.7 wt % with respect to a total weight of the slurry compound.