Multi-gas centrally cooled showerhead design

Abstract

A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate define a second plenum. A plurality of gas conduits extend from the second plenum through the heat exchanging channel and the first plenum. The method generally includes flowing a first gas through a first plenum into a processing region, and flowing a second gas through a second plenum into a processing region. A heat exchanging fluid is introduced to a heat exchanging channel disposed between the first plenum and the second plenum. The first gas and the second gas are then reacted to form a film on a substrate.

We claim: 
     
         1 . An apparatus, comprising:
 a lower bottom plate;   an upper bottom plate positioned above the lower bottom plate, the upper bottom plate and the lower bottom plate defining a first plenum within the apparatus;   a mid-plate positioned above the upper bottom plate, the mid-plate and the upper bottom plate defining a heat exchange channel within the apparatus; and   a top plate positioned above the mid-plate, the top plate and the mid-plate defining a second plenum within the apparatus, wherein one or more first gas conduits extend from the second plenum through the heat exchanging channel and the first plenum, and each of the one or more first gas conduits in fluid communication with the second plenum and a processing region of a processing chamber.   
     
     
         2 . The apparatus of  claim 1 , wherein the top plate, the mid-plate, the upper bottom plate, the lower bottom plate and the plurality of first gas conduits comprise stainless steel. 
     
     
         3 . The apparatus of  claim 2 , wherein the mid-plate and the upper bottom plate both have holes disposed therethrough, and wherein the one or more first gas conduits are positioned within the holes of the mid-plate and the upper bottom plate. 
     
     
         4 . The apparatus of  claim 3 , further comprising one or more second gas conduits, wherein the one or more first gas conduits and the one or more second gas conduits are positioned in a hexagonal close pack orientation on a surface of the lower bottom plate. 
     
     
         5 . The apparatus of  claim 3 , further comprising one or more second gas conduits, wherein the one or more first gas conduits and the one or more second gas conduits form concentric circular arrays on a surface of the lower bottom plate. 
     
     
         6 . The apparatus of  claim 1 , wherein the one or more first conduits is a plurality of first conduits. 
     
     
         7 . The apparatus of  claim 1 , further comprising one or more second gas conduits, wherein the one or more first gas conduits and the one or more second gas conduits form concentric circular arrays on a surface of the lower bottom plate. 
     
     
         8 . The apparatus of  claim 1 , wherein the mid-plate and the upper bottom plate both have holes disposed therethrough, and wherein the one or more first gas conduits are positioned within the holes of the mid-plate and the upper bottom plate. 
     
     
         9 . A chamber, comprising:
 a chamber body;   a substrate carrier disposed in the chamber body; and   a showerhead assembly, the showerhead assembly comprising:
 a lower bottom plate; 
 an upper bottom plate positioned above the lower bottom plate, the upper bottom plate and the lower bottom plate defining a first plenum within the showerhead; 
 a mid-plate positioned above the upper bottom plate, the mid-plate and the upper bottom plate defining a heat exchange channel within the showerhead; and 
 a top plate positioned above the mid-plate, the top plate and the mid-plate defining a second plenum within the showerhead, wherein one or more first gas conduits extend from the second plenum through the heat exchanging channel and the first plenum, and each of the one or more first gas conduits in fluid communication with the second plenum and a processing region of the chamber. 
   
     
     
         10 . The chamber of  claim 9 , further comprising a heat exchanger fluidly coupled to the heat exchange channel. 
     
     
         11 . The chamber of  claim 9 , further comprising a remote plasma source coupled the one or more first gas conduits. 
     
     
         12 . The apparatus of  claim 9 , wherein the top plate, the mid-plate, the upper bottom plate, the lower bottom plate and the plurality of first gas conduits comprise stainless steel. 
     
     
         13 . The apparatus of  claim 12 , wherein the mid-plate and the upper bottom plate both have holes disposed therethrough, and wherein the one or more first gas conduits are positioned within the holes of the mid-plate and the upper bottom plate. 
     
     
         14 . The apparatus of  claim 13 , further comprising one or more second gas conduits, wherein the one or more first gas conduits and the one or more second gas conduits are positioned in a hexagonal close pack orientation on a surface of the lower bottom plate. 
     
     
         15 . The apparatus of  claim 13 , further comprising one or more second gas conduits, wherein the one or more first gas conduits and the one or more second gas conduits form concentric circular arrays on a surface of the lower bottom plate. 
     
     
         16 . The apparatus of  claim 9 , wherein the one or more first conduits is a plurality of first conduits. 
     
     
         17 . The apparatus of  claim 9 , further comprising one or more second gas conduits, wherein the one or more first gas conduits and the one or more second gas conduits form concentric circular arrays on a surface of the lower bottom plate. 
     
     
         18 . A method, comprising:
 flowing a first gas through a first plenum of a showerhead apparatus and into a processing region of a chamber;   flowing a second gas through a second plenum of the showerhead apparatus and into the processing region of the chamber, the second plenum fluidly coupled to the processing region through one or more gas conduits;   introducing a heat exchanging fluid to a heat exchanging channel disposed between the first plenum and the second plenum, wherein the plurality of gas conduits extend through the heat exchanging channel; and   reacting the first gas and the second gas in the processing region to form a film on the substrate, wherein the temperature of the first gas is greater than the temperature of the second gas when the first gas and the second gas enter the processing region.   
     
     
         19 . The method of  claim 18 , wherein the first gas comprises a Group III element and the second gas comprises a Group V element. 
     
     
         20 . The method of  claim 19 , wherein the first gas comprises gallium and the second gas comprises ammonia.