Semiconductor light emitting element and method for manufacturing same

Abstract

According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.

1 . A semiconductor light emitting element, comprising:
 a support substrate;   a semiconductor stacked body including a light emitting portion, the semiconductor stacked body having a first surface and a second surface opposite to the first surface;   a first electrode provided between the second surface and the support substrate, the first electrode including a first film made of metal;   a bonding portion provided between the first electrode and the support substrate;   an intermediate metal film made of metal, the intermediate metal film having a linear expansion coefficient smaller than a linear expansion coefficient of the first film and being disposed between the first electrode and the bonding portion; and   a film covering a side surface of the semiconductor stacked body,   the bonding portion being in contact with the support substrate, the bonding portion including a second film and a third film, the second film being made of metal and disposed between the intermediate metal film and the third film, the third film including gold (Au), and the second film having a linear expansion coefficient smaller than the linear expansion coefficient of the intermediate metal film.   
     
     
         2 . The semiconductor light emitting element according to  claim 1 , wherein
 the bonding portion has a third surface that is parallel to the second surface, and the semiconductor stacked body and the film each have a portion contacting the bonding portion along the third surface.   
     
     
         3 . The semiconductor light emitting element according to  claim 2 , wherein
 the intermediate metal film is in contact with the first film, and   the intermediate metal film is made of a metal selected from nickel (Ni), platinum (Pt), rhodium (Rh), and palladium (Pd).   
     
     
         4 . The semiconductor light emitting element according to  claim 3 , wherein
 the first film includes silver (Ag), and   the second film includes titanium (Ti).   
     
     
         5 . The semiconductor light emitting element according to  claim 2 , wherein the side surface of the semiconductor stacked body is inclined with respect to a plane orthogonal to the third surface. 
     
     
         6 . The semiconductor light emitting element according to  claim 2 , wherein the first surface has a surface area in a first plane parallel to the third surface that is smaller than a surface area of the second surface in a second plane parallel to the third surface. 
     
     
         7 . The semiconductor light emitting element according to  claim 2 , wherein a length in a first direction of the portion of the bonding portion along the third surface is greater than a length in the first direction of the portion of the semiconductor stacked body along the third surface. 
     
     
         8 . The semiconductor light emitting element according to  claim 1 ,
 wherein the bonding portion has a third surface that is parallel to the second surface, and the third surface is a surface of the third film,   wherein the second film is disposed on the third film at the third surface, and   wherein the film covers the side surface of the semiconductor stacked body, a side surface of the first electrode, and the third surface.   
     
     
         9 . The semiconductor light emitting element according to  claim 8 , wherein
 the intermediate metal film is in contact with the first film, and   the intermediate metal film is made of a metal selected from nickel (Ni), platinum (Pt), rhodium (Rh), and palladium (Pd).   
     
     
         10 . The semiconductor light emitting element according to  claim 9 , wherein
 the first film includes silver (Ag), and   the second film includes titanium (Ti).   
     
     
         11 . The semiconductor light emitting element according to  claim 8 , wherein the side surface of the semiconductor stacked body is inclined with respect to a plane orthogonal to the third surface. 
     
     
         12 . The semiconductor light emitting element according to  claim 8 , wherein the first surface has a surface area in a first plane parallel to the third surface that is smaller than a surface area of the second surface in a second plane parallel to the third surface. 
     
     
         13 . The semiconductor light emitting element according to  claim 8 , wherein a length in a first direction of the portion of the bonding portion along the third surface is greater than a length in the first direction of the portion of the semiconductor stacked body along the third surface. 
     
     
         14 . A semiconductor light emitting device, comprising:
 a semiconductor light emitting element;   a molded body enclosing the semiconductor light emitting element; and   a terminal being in electrical continuity with the semiconductor light emitting element, the terminal provided outside the molded body,   the semiconductor light emitting element including:
 a support substrate; 
 a semiconductor stacked body including a light emitting portion, the semiconductor stacked body having a first surface and a second surface opposite to the first surface; 
 a first electrode provided between the second surface and the support substrate, the first electrode including a first film made of metal; 
 a bonding portion provided between the first electrode and the support substrate; 
 an intermediate metal film made of a metal, the intermediate metal film having a linear expansion coefficient smaller than a linear expansion coefficient of the first film and being disposed between the first electrode and the bonding portion; and 
 a film covering a side surface of the semiconductor stacked body, 
   the bonding portion being in contact with the support substrate, the bonding portion including a second film and a third film, the second film being made of metal and disposed between the intermediate metal film and the third film, the third film including gold (Au), and the second film having a linear expansion coefficient smaller than the linear expansion coefficient of the intermediate metal film.