Semiconductor device and manufacturing method thereof

Abstract

(OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. (MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.

1 . (canceled) 
     
     
         2 . A light-emitting device comprising:
 a substrate;   a layer including an element over the substrate; and   a magnet sheet over the layer including the element,   wherein the layer including the element comprises:
 a semiconductor film over the substrate; 
 a gate electrode overlapping with the semiconductor film; 
 a gate insulating film between the semiconductor film and the gate electrode; 
 a first insulating film over the semiconductor film and the gate electrode; 
 a source or drain electrode over the first insulating film and electrically connected to the semiconductor film; 
 a light-emitting element comprising:
 a first electrode over and electrically connected to the source or drain electrode, the first electrode comprising a transparent conductive film, wherein an insulating substance is located over an end portion of the first electrode; 
 a light-emitting layer over the first electrode and the insulating substance; and 
 a second electrode over the insulating substance and the light-emitting layer; 
 
 a second insulating film over the second electrode, the second insulating film comprising silicon, nitrogen and oxygen; and 
 an organic material over the second insulating film, 
 wherein the magnet sheet is attracted to the layer including the element by a magnetic force. 
   
     
     
         3 . The light-emitting device according to  claim 2 , wherein the organic material is an epoxy resin. 
     
     
         4 . The light-emitting device according to  claim 2 ,
 wherein the first electrode comprises indium, tin and oxygen, and   wherein the second electrode comprises aluminum.   
     
     
         5 . The light-emitting device according to  claim 2 , wherein the magnet sheet is attracted to a metal line of the layer including the element by a magnetic force. 
     
     
         6 . The light-emitting device according to  claim 2 , wherein the light-emitting layer comprises an organic compound. 
     
     
         7 . The light-emitting device according to  claim 2 , wherein the semiconductor film is a polysilicon film or an amorphous silicon film. 
     
     
         8 . A light-emitting device comprising:
 a substrate;   a layer including an element over the substrate; and   a magnet sheet over the layer including the element,   wherein the layer including the element comprises:
 a semiconductor film over the substrate; 
 a gate electrode over the semiconductor film; 
 a gate insulating film between the semiconductor film and the gate electrode; 
 a first insulating film over the semiconductor film and the gate electrode; 
 a source or drain electrode over the first insulating film and electrically connected to the semiconductor film; 
 a light-emitting element comprising:
 a first electrode over and electrically connected to the source or drain electrode, the first electrode comprising a transparent conductive film, wherein an insulating substance is located over an end portion of the first electrode; 
 a light-emitting layer over the first electrode and the insulating substance; and 
 a second electrode over the insulating substance and the light-emitting layer; 
 
 a second insulating film over the second electrode, the second insulating film comprising silicon, nitrogen and oxygen; and 
 an organic material over the second insulating film, 
   wherein the magnet sheet is attracted to the layer including the element by a magnetic force,   wherein the insulating substance comprises a lower end portion having a curved surface, an upper end portion having a curved surface and a center end portion between the lower end portion and the upper end portion,   wherein each of the lower end portion, the upper end portion and the center end portion overlaps with the first electrode,   wherein the lower end portion has a first angle formed between a tangent plane at the lower end portion and a bottom surface of the insulating substance,   wherein the center end portion has a second angle formed between a tangent plane at the center end portion and the bottom surface of the insulating substance, and   wherein the first angle is smaller than the second angle.   
     
     
         9 . The light-emitting device according to  claim 8 , wherein the organic material is an epoxy resin. 
     
     
         10 . The light-emitting device according to  claim 8 ,
 wherein the first electrode comprises indium, tin and oxygen, and   wherein the second electrode comprises aluminum.   
     
     
         11 . The light-emitting device according to  claim 8 , wherein the magnet sheet is attracted to a metal line of the layer including the element by a magnetic force. 
     
     
         12 . The light-emitting device according to  claim 8 , wherein the light-emitting layer comprises an organic compound. 
     
     
         13 . The light-emitting device according to  claim 8 , wherein the semiconductor film is a polysilicon film or an amorphous silicon film. 
     
     
         14 . A light-emitting device comprising:
 a substrate;   a layer including an element over the substrate; and   a magnet sheet over the layer including the element,   wherein the layer including the element comprises:
 a semiconductor film over the substrate; 
 a gate electrode over the semiconductor film; 
 a gate insulating film between the semiconductor film and the gate electrode; 
 a first insulating film over the semiconductor film and the gate electrode; 
 a source or drain electrode over the first insulating film and electrically connected to the semiconductor film; 
 a light-emitting element comprising:
 a first electrode over and electrically connected to the source or drain electrode, the first electrode comprising a transparent conductive film, wherein an insulating substance is located over an end portion of the first electrode; 
 a light-emitting layer over the first electrode and the insulating substance; and 
 a second electrode over the insulating substance and the light-emitting layer; 
 
 a second insulating film over the second electrode, the second insulating film comprising silicon, nitrogen and oxygen; and 
 an organic material over the second insulating film, 
   wherein the magnet sheet is attracted to the layer including the element by a magnetic force,   wherein the insulating substance comprises a lower end portion having a curved surface, an upper end portion having a curved surface and a center end portion between the lower end portion and the upper end portion,   wherein each of the lower end portion, the upper end portion and the center end portion overlaps with the first electrode,   wherein the lower end portion has a first angle formed between a tangent plane at the lower end portion and a bottom surface of the insulating substance,   wherein the center end portion has a second angle formed between a tangent plane at the center end portion and the bottom surface of the insulating substance,   wherein the first angle is smaller than the second angle, and   wherein an end of the substrate is covered with a resin.   
     
     
         15 . The light-emitting device according to  claim 14 , wherein the resin is an organic resin. 
     
     
         16 . The light-emitting device according to  claim 14 , wherein the organic material is an epoxy resin. 
     
     
         17 . The light-emitting device according to  claim 14 ,
 wherein the first electrode comprises indium, tin and oxygen, and   wherein the second electrode comprises aluminum.   
     
     
         18 . The light-emitting device according to  claim 14 , wherein the magnet sheet is attracted to a metal line of the layer including the element by a magnetic force. 
     
     
         19 . The light-emitting device according to  claim 14 , wherein the light-emitting layer comprises an organic compound. 
     
     
         20 . The light-emitting device according to  claim 14 , wherein the semiconductor film is a polysilicon film or an amorphous silicon film. 
     
     
         21 . A light-emitting device comprising:
 a substrate;   a layer including an element over the substrate;   a magnet sheet over the layer including the element; and   a metal film between the layer including the element and the magnet sheet,   wherein the layer including the element comprises:
 a semiconductor film over the substrate; 
 a gate electrode over the semiconductor film; 
 a gate insulating film between the semiconductor film and the gate electrode; 
 a first insulating film over the semiconductor film and the gate electrode; 
 a source or drain electrode over the first insulating film and electrically connected to the semiconductor film; 
 a light-emitting element comprising:
 a first electrode over and electrically connected to the source or drain electrode, the first electrode comprising a transparent conductive film, wherein an insulating substance is located over an end portion of the first electrode; 
 a light-emitting layer over the first electrode and the insulating substance; and 
 a second electrode over the insulating substance and the light-emitting layer; 
 
 a second insulating film over the second electrode, the second insulating film comprising silicon, nitrogen and oxygen; and 
 an organic material over the second insulating film, 
   wherein the magnet sheet is attracted to the layer including the element by a magnetic force,   wherein the insulating substance comprises a lower end portion having a curved surface, an upper end portion having a curved surface and a center end portion between the lower end portion and the upper end portion,   wherein each of the lower end portion, the upper end portion and the center end portion overlaps with the first electrode,   wherein the lower end portion has a first angle formed between a tangent plane at the lower end portion and a bottom surface of the insulating substance,   wherein the center end portion has a second angle formed between a tangent plane at the center end portion and the bottom surface of the insulating substance,   wherein the first angle is smaller than the second angle, and   wherein an end of the substrate is covered with a resin.   
     
     
         22 . The light-emitting device according to  claim 21 , wherein the metal film is an etching stopper film. 
     
     
         23 . The light-emitting device according to  claim 21 , wherein the organic material is an epoxy resin. 
     
     
         24 . The light-emitting device according to  claim 21 ,
 wherein the first electrode comprises indium, tin and oxygen, and   wherein the second electrode comprises aluminum.   
     
     
         25 . The light-emitting device according to  claim 21 , wherein the magnet sheet is attracted to a metal line of the layer including the element by a magnetic force. 
     
     
         26 . The light-emitting device according to  claim 21 , wherein the light-emitting layer comprises an organic compound. 
     
     
         27 . The light-emitting device according to  claim 21 , wherein the semiconductor film is a polysilicon film or an amorphous silicon film.