US2016133577A1PendingUtilityA1

Wiring Structures and Methods of Forming the Same

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Dec 23, 2013Filed: Jan 19, 2016Published: May 12, 2016
Est. expiryDec 23, 2033(~7.4 yrs left)· nominal 20-yr term from priority
H10W 20/0765H10W 20/495H10W 20/077H10W 20/072H10W 20/062H10W 20/057H10W 20/056H10W 20/48H10W 20/47H10W 20/46H10W 20/43H10W 20/42H10W 20/037H10W 20/033H10W 20/425H10D 64/011H01L 23/5226H01L 23/53238H01L 23/5329
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Claims

Abstract

A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A wiring structure, comprising:
 a first insulation layer on a substrate;   a plurality of wiring patterns on the first insulation layer, each of the plurality of wiring patterns including a metal layer pattern and a barrier layer pattern on a sidewall and a bottom surface of the metal layer pattern;   a protection layer pattern on a top surface of each of the plurality of wiring patterns and including a material having a high reactivity with respect to oxygen; and   a second insulation layer on the protection layer pattern and the first insulation layer, the second insulation layer including an air gap between ones of the plurality of wiring patterns.   
     
     
         2 . The wiring structure of  claim 1 , wherein the protection layer pattern includes a metal and/or a metal nitride. 
     
     
         3 . The wiring structure of  claim 1 , wherein the protection layer pattern includes aluminum nitride and/or cobalt. 
     
     
         4 . A wiring structure, comprising:
 a first insulation layer on a substrate, the first insulation structure including a plurality of recesses formed therein;   a plurality of wiring patterns on the first insulation layer, ones of the plurality of wiring patterns including a metal layer pattern and a barrier layer pattern on a sidewall and a bottom surface of the metal layer pattern, ones of the plurality of wiring patterns configured to be formed in respective ones of the plurality of recesses;   a protection layer pattern on a top surface of each of the plurality of wiring patterns and including a material having a high reactivity with respect to oxygen; and   a second insulation layer on non-recessed surfaces of the first insulation layer and on the protection layer pattern, wherein the second insulation layer includes a plurality of air gaps, ones of which are arranged between ones of the plurality of wiring patterns.   
     
     
         5 . The wiring structure of  claim 4 , further comprising an upper insulation layer formed on the second insulation layer. 
     
     
         6 . The wiring structure of  claim 4 , wherein the protection layer pattern includes a metal and/or a metal nitride. 
     
     
         7 . The wiring structure of  claim 4 , wherein the protection layer pattern includes aluminum nitride and/or cobalt. 
     
     
         8 . The wiring structure according to  claim 4 , wherein the plurality of wiring patterns each extend in a first direction and are spaced apart in a second direction that is substantially perpendicular to the first direction.

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