Manufacturing method of semiconductor device

Abstract

Suppressed is damage of a semiconductor wafer due to charging of a cleaning liquid used in a single wafer type wafer cleaning step. A chemical solution discharged from a tip of a cleaning nozzle is brought into contact with protrusions of wafer chucks to thereby let static electricity of the chemical solution go to the wafer chucks, and subsequently, the cleaning nozzle is moved above the wafer to supply the chemical solution onto a top surface of the wafer, thereby suppressing abnormal discharge (damage) of the wafer due to charging of the chemical solution.

1 - 8 . (canceled) 
     
     
         9 . A manufacturing method of a semiconductor device, including the step of cleaning the semiconductor wafer in a single wafer system by supplying a chemical solution onto a top surface of the semiconductor wafer from a cleaning nozzle while holding a periphery of the semiconductor wafer with wafer chucks and rotating the semiconductor wafer and the wafer chucks in a horizontal plane, the method comprising the steps of: (a) temporarily stopping the cleaning nozzle above a rotational trajectory of the wafer chucks while discharging the chemical solution from a tip of the cleaning nozzle; and (b) after the step (a), moving the cleaning nozzle above the semiconductor wafer while discharging the chemical solution from the tip of the cleaning nozzle. 
     
     
         10 . The manufacturing method of a semiconductor device according to  claim 9 ,
 wherein the chemical solution is comprised of an electrolyte solution containing acid or alkali.   
     
     
         11 . The manufacturing method of a semiconductor device according to  claim 10 ,
 wherein the acid is sulfuric acid.   
     
     
         12 . The manufacturing method of a semiconductor device according to  claim 9 ,
 wherein the step of cleaning the semiconductor wafer in the single wafer system is a cleaning step to be performed after removing a photoresist film by ashing.