Double Layer Release Temporary Bond and Debond Processes and Systems

Abstract

A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

What is claimed is: 
     
         1 . A bonded structure, comprising:
 a first substrate containing at least one feature, the first substrate having a top surface and an opposed bottom surface;   a first release layer overlying the top surface of the first substrate, the first release layer being absorptive of light having a first wavelength for being at least one of decomposed, ablated and vaporized by the light having the first wavelength;   an adhesive layer overlying the first release layer;   a second release layer overlying the adhesive layer; the second release layer being absorptive of light having a second wavelength for being at least one of decomposed, ablated and vaporized by the light having the second wavelength; and   a second substrate overlying the second release layer, the second substrate being substantially transparent to the light having the first wavelength and to the light having the second wavelength.   
     
     
         2 . The bonded structure as in  claim 1 , where the first substrate comprises a semiconductor substrate and where the second substrate comprises one of a semiconductor substrate, a sapphire substrate, a glass substrate or a polymer substrate. 
     
     
         3 . The bonded structure of  claim 1 , where the first wavelength and the second wavelength are substantially equal to one another, or where the first wavelength and the second wavelength are substantially different from one another. 
     
     
         4 . The bonded structure of  claim 1 , where the second wavelength is within a range of ultraviolet wavelengths and where the first wavelength is within a range of infrared wavelengths. 
     
     
         5 . The bonded structure of  claim 1 , further comprising a protective layer disposed between the first release layer and the top surface of the first substrate, the protective layer being one of absorptive of the light or reflective to at least the light having the first wavelength. 
     
     
         6 . A method, comprising:
 providing a bonded structure that comprises a first substrate containing at least one feature, the first substrate having a top surface and an opposed bottom surface; a first release layer overlying the top surface of the first substrate, the first release layer being absorptive of light having a first wavelength for being at least one of decomposed, ablated and vaporized by the light having the first wavelength; an adhesive layer overlying the first release layer; a second release layer overlying the adhesive layer; the second release layer being absorptive of light having a second wavelength for being at least one of decomposed, ablated and vaporized by the light having the second wavelength; and a second substrate overlying the second release layer, the second substrate being substantially transparent to the light having the first wavelength and to the light having the second wavelength;   applying light having the first wavelength and the second wavelength to the bonded structure to at least one of decompose, ablate and vaporize the first release layer and the second release layer thereby debonding the second wafer from the structure; and   removing the adhesive layer.   
     
     
         7 . The method of  claim 6 , further comprising reclaiming the removed adhesive layer for reuse. 
     
     
         8 . The method of  claim 6 , wherein the removed adhesive layer is processed and subsequently at least one of segregated, filtered, reconstituted and processed such that adhesive of the adhesive layer can be reused. 
     
     
         9 . The method as in  claim 6 , where the first substrate comprises a semiconductor substrate and where the second substrate comprises one of a semiconductor substrate, a sapphire substrate, a glass substrate or a polymer substrate. 
     
     
         10 . The method as in  claim 6 , where the first wavelength and the second wavelength are substantially equal to one another, or where the first wavelength and the second wavelength are substantially different from one another. 
     
     
         11 . The method as in  claim 6 , where the second wavelength is within a range of ultraviolet wavelengths and where the first wavelength is within a range of infrared wavelengths. 
     
     
         12 . The method as in  claim 6 , where the second substrate is cleaned by means of at least one of chemical cleaning and oxygen/plasma ashing and reused. 
     
     
         13 . The method as in  claim 6 , performed by a tool that comprises at least one laser, optics, optical scanner and alignment and power sensors to support precision debonding, cutting for wafers, panels and other form factor structures and to support at least one of wafer thinning, miniaturization, component segmentation and cavity formation. 
     
     
         14 . A method, comprising:
 providing a bonded structure that comprises a first substrate containing at least one feature, the first substrate having a top surface and an opposed bottom surface; an adhesive layer overlying the top surface of the first substrate; a release layer overlying the adhesive layer; the release layer being absorptive of light having a predetermined wavelength for being at least one of decomposed, ablated and vaporized by the light having the second wavelength; and a second substrate having a bottom surface overlying the release layer and an opposed top surface, the second substrate being substantially transparent to the light having the predetermined wavelength;   applying a focused beam of light to the bonded structure to cut through the release layer, the adhesive layer and the first substrate to form at least two bonded sub-structures, the second substrate being substantially transparent to the focused beam of light; and   applying light having the predetermined wavelength to the bonded structure to at least one of decompose, ablate and vaporize the release layer thereby debonding the at least two bonded sub-structures from the second wafer.   
     
     
         15 . The method as in  claim 14 , where the focused beam of light is applied to the top surface of the second substrate. 
     
     
         16 . The method as in  claim 14 , where the focused beam of light is applied to the bottom surface of the first substrate. 
     
     
         17 . The method as in  claim 14 , further comprising removing a portion of the adhesive layer that covers the portion of the first substrate of each of the released sub-structures. 
     
     
         18 . The method as in  claim 14 , where the first substrate comprises a semiconductor substrate and where the second substrate comprises one of a semiconductor substrate, a sapphire substrate, a glass substrate or a polymer substrate. 
     
     
         19 . The method as in  claim 14 , where the second substrate is cleaned by means of at least one of chemical cleaning and oxygen/plasma ashing and reused. 
     
     
         20 . The method as in  claim 14 , performed by a tool that comprises at least one laser, optics, optical scanner and alignment and power sensors to support precision debonding, cutting for wafers, panels and other form factor structures and to support at least one of wafer thinning, miniaturization, component segmentation and cavity formation.