Semiconductor device, imaging device, and electronic device

Abstract

Provided is a novel semiconductor device, a semiconductor device with reduced area, or a versatile semiconductor device. The semiconductor device includes a pixel portion including a first pixel, a second pixel, a third pixel, and a fourth pixel; a first switch and a second switch located outside the first to fourth pixels; a first wiring located outside the first to fourth pixels; a second wiring electrically connected to the first and second pixels; and a third wiring electrically connected to the third and fourth pixels. A first terminal of the first switch is electrically connected to the first wiring. A second terminal of the first switch is electrically connected to the second wiring. A first terminal of the second switch is electrically connected to the first wiring. A second terminal of the second switch is electrically connected to the third wiring.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a pixel portion comprising a first pixel, a second pixel, a third pixel, and a fourth pixel;   a first switch and a second switch located outside the first pixel, the second pixel, the third pixel, and the fourth pixel;   a first wiring located outside the first pixel, the second pixel, the third pixel, and the fourth pixel;   a second wiring electrically connected to the first pixel and the second pixel; and   a third wiring electrically connected to the third pixel and the fourth pixel,   wherein a first terminal of the first switch is electrically connected to the first wiring,   wherein a second terminal of the first switch is electrically connected to the second wiring,   wherein a first terminal of the second switch is electrically connected to the first wiring, and   wherein a second terminal of the second switch is electrically connected to the third wiring.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising a fourth wiring configured to supply a reset potential to the first pixel, the second pixel, the third pixel, and the fourth pixel,
 wherein a potential higher than the fourth wiring is supplied to the first wiring.   
     
     
         3 . An imaging device comprising:
 a photodetector portion including the semiconductor device according to  claim 1 ; and   a data processing portion capable of generating an image data in accordance with a signal from the photodetector portion.   
     
     
         4 . An electronic device comprising:
 the semiconductor device according to  claim 1 ; and   at least one of a lens, a display portion, an operation key, and a shutter button.   
     
     
         5 . A semiconductor device comprising:
 a pixel portion comprising a first pixel, a second pixel, a third pixel, and a fourth pixel;   a first switch and a second switch located outside the first pixel, the second pixel, the third pixel, and the fourth pixel;   a first wiring located outside the first pixel, the second pixel, the third pixel, and the fourth pixel;   a second wiring electrically connected to the first pixel and the second pixel; and   a third wiring electrically connected to the third pixel and the fourth pixel,   wherein a first terminal of the first switch is electrically connected to the first wiring,   wherein a second terminal of the first switch is electrically connected to the second wiring,   wherein a first terminal of the second switch is electrically connected to the first wiring,   wherein a second terminal of the second switch is electrically connected to the third wiring,   wherein the first pixel, the second pixel, the third pixel, and the fourth pixel are configured to be reset in a first step,   wherein the first switch is configured to be turned on, a potential of the first wiring is configured to be supplied to the second wiring, and an electric signal is configured to be read from the first pixel and the second pixel in a second step after the first step,   wherein the first pixel, the second pixel, the third pixel, and the fourth pixel are configured to be reset in a third step after the second step, and   wherein the second switch is configured to be turned on, a potential of the first wiring is configured to be supplied to the third wiring, and an electric signal is configured to be read from the third pixel and the fourth pixel in a fourth step after the third step.   
     
     
         6 . The semiconductor device according to  claim 5 , further comprising a fourth wiring configured to supply a reset potential to the first pixel, the second pixel, the third pixel, and the fourth pixel,
 wherein a potential higher than the fourth wiring is supplied to the first wiring.   
     
     
         7 . The semiconductor device according to  claim 5 ,
 wherein the first pixel, the second pixel, the third pixel, and the fourth pixel each include a photoelectric conversion element and a transistor,   wherein the photoelectric conversion element is electrically connected to the transistor, and   wherein a channel formation region of the transistor includes an oxide semiconductor.   
     
     
         8 . The semiconductor device according to  claim 7 ,
 wherein the photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and   wherein the photoelectric conversion layer contains selenium.   
     
     
         9 . The semiconductor device according to  claim 5 ,
 wherein the first switch is a first transistor,   wherein the second switch is a second transistor,   wherein the first pixel, the second pixel, the third pixel, and the fourth pixel each include a photoelectric conversion element and a third transistor,   wherein the photoelectric conversion element is electrically connected to the third transistor,   wherein a channel formation region of each of the first transistor and the second transistor includes a single-crystal semiconductor,   wherein a channel formation region of the third transistor includes an oxide semiconductor, and   wherein the third transistor is stacked over the first transistor and the second transistor.   
     
     
         10 . The semiconductor device according to  claim 9 ,
 wherein the photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and   wherein the photoelectric conversion layer contains selenium.   
     
     
         11 . An imaging device comprising:
 a photodetector portion including the semiconductor device according to  claim 5 ; and   a data processing portion capable of generating an image data in accordance with a signal from the photodetector portion.   
     
     
         12 . An electronic device comprising:
 the semiconductor device according to  claim 5 ; and   at least one of a lens, a display portion, an operation key, and a shutter button.   
     
     
         13 . A semiconductor device comprising:
 a pixel portion comprising a first pixel, a second pixel, a third pixel, and a fourth pixel;   a first switch and a second switch located outside the first pixel, the second pixel, the third pixel, and the fourth pixel;   a first wiring located outside the first pixel, the second pixel, the third pixel, and the fourth pixel;   a second wiring electrically connected to the first pixel and the second pixel; and   a third wiring electrically connected to the third pixel and the fourth pixel,   wherein a first terminal of the first switch is electrically connected to the first wiring,   wherein a second terminal of the first switch is electrically connected to the second wiring,   wherein a first terminal of the second switch is electrically connected to the first wiring,   wherein a second terminal of the second switch is electrically connected to the third wiring, and   wherein the first pixel, the second pixel, the third pixel, and the fourth pixel each include a photoelectric conversion element.   
     
     
         14 . The semiconductor device according to  claim 13 , further comprising a fourth wiring configured to supply a reset potential to the first pixel, the second pixel, the third pixel, and the fourth pixel,
 wherein a potential higher than the fourth wiring is supplied to the first wiring.   
     
     
         15 . The semiconductor device according to  claim 13 ,
 wherein the first pixel, the second pixel, the third pixel, and the fourth pixel each include a transistor,   wherein the photoelectric conversion element is electrically connected to the transistor, and   wherein a channel formation region of the transistor includes an oxide semiconductor.   
     
     
         16 . The semiconductor device according to  claim 13 ,
 wherein the first switch is a first transistor,   wherein the second switch is a second transistor,   wherein the first pixel, the second pixel, the third pixel, and the fourth pixel each include a third transistor,   wherein the photoelectric conversion element is electrically connected to the third transistor,   wherein a channel formation region of each of the first transistor and the second transistor includes a single-crystal semiconductor,   wherein a channel formation region of the third transistor includes an oxide semiconductor, and   wherein the third transistor is stacked over the first transistor and the second transistor.   
     
     
         17 . The semiconductor device according to  claim 13 ,
 wherein the photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and   wherein the photoelectric conversion layer contains selenium.   
     
     
         18 . An imaging device comprising:
 a photodetector portion including the semiconductor device according to  claim 13 ; and   a data processing portion capable of generating an image data in accordance with a signal from the photodetector portion.   
     
     
         19 . An electronic device comprising:
 the semiconductor device according to  claim 13 ; and   at least one of a lens, a display portion, an operation key, and a shutter button.