Methods and apparatuses for forming multiple radio frequency (rf) components associated with different rf bands on a chip

Abstract

A device includes a first radio frequency (RF) component on a die. The first RF component includes a first lightly doped region having a first value of a characteristic, and the first RF component is configured to operate in a first RF band associated with a first frequency. The device further includes a second RF component on the die. The second RF component includes a second lightly doped region having a second value of the characteristic that is different from the first value. The second RF component is configured to operate in a second RF band associated with a second frequency that is different from the first frequency.

What is claimed is: 
     
         1 . A device comprising:
 a first radio frequency (RF) component on a die, wherein the first RF component includes a first lightly doped region having a first value of a characteristic, the first RF component configured to operate in a first RF band associated with a first frequency; and   a second RF component on the die, wherein the second RF component includes a second lightly doped region having a second value of the characteristic that is different from the first value, the second RF component configured to operate in a second RF band associated with a second frequency that is different from the first frequency.   
     
     
         2 . The device of  claim 1 , wherein the characteristic includes a profile, a dopant type, or a dopant concentration. 
     
     
         3 . The device of  claim 1 , wherein the first lightly doped region has a larger profile than the second lightly doped region. 
     
     
         4 . The device of  claim 1 , wherein a first molecular weight of a first dopant in the first lightly doped region is greater than a second molecular weight of a second dopant in the second lightly doped region. 
     
     
         5 . The device of  claim 1 , wherein a first dopant concentration of a first dopant in the first lightly doped region is greater than a second dopant concentration of a second dopant in the second lightly doped region. 
     
     
         6 . The device of  claim 1 , wherein the second RF component is fabricated by a process that includes forming a layer of a first gate oxide, removing a portion of the first gate oxide from a region of the die, and forming a layer of a second gate oxide in the region. 
     
     
         7 . The device of  claim 1 , wherein the first RF component and the second RF component comprise semiconductor devices that are integrated in the die. 
     
     
         8 . The device of  claim 1 , wherein the first RF component includes a first halo region having a third value of a second characteristic, and the second RF component includes a second halo region having a fourth value of the second characteristic that is different from the third value. 
     
     
         9 . A device comprising:
 a first radio frequency (RF) component on a die, wherein the first RF component includes a first halo region having a first value of a characteristic, the first RF component configured to operate in a first RF band associated with a first frequency; and   a second RF component on the die, wherein the second RF component includes a second halo region having a second value of the characteristic, wherein the second value is different from the first value and the second RF component is configured to operate in a second RF band associated with a second frequency that is different from the first frequency.   
     
     
         10 . The device of  claim 9 , wherein the characteristic includes a profile, a dopant type, or a dopant concentration. 
     
     
         11 . The device of  claim 9 , wherein the first halo region has a larger profile than the second halo region. 
     
     
         12 . The device of  claim 9 , wherein a first molecular weight of a first dopant in the first halo region is greater than a second molecular weight of a second dopant in the second halo region. 
     
     
         13 . The device of  claim 9 , wherein a first dopant concentration of a first dopant in the first halo region is greater than a second dopant concentration of a second dopant in the second halo region. 
     
     
         14 . The device of  claim 9 , wherein the second RF component is fabricated by a process that includes forming a layer of a first gate oxide, removing a portion of the first gate oxide on a region of the die, and forming a layer of a second gate oxide on the region. 
     
     
         15 . The device of  claim 9 , wherein the first RF component and the second RF component comprise semiconductor devices that are integrated in the die. 
     
     
         16 . A method comprising:
 performing, on a wafer, a complementary metal-oxide-semiconductor (CMOS) process to form a first radio frequency (RF) circuit and a second RF circuit, the first RF circuit configured to operate in a first RF band associated with a first frequency, the second RF circuit configured to operate in a second RF band associated with a second frequency that is greater than the first frequency, wherein performing the CMOS process comprises:
 forming a first RF device of the first RF circuit, the first RF device having a first device type and a first value of a characteristic; and 
 forming a second RF device of the second RF circuit, the second RF device having a second device type and a second value of the characteristic, wherein the first device type and the second device type are a same device type, and wherein the first value of the characteristic is different from the second value of the characteristic. 
   
     
     
         17 . The method of  claim 16 , wherein the device type is one of a power amplifier, a switch, or a low noise amplifier, and wherein the characteristic is associated with an oxide thickness, a channel length, a spacer profile, a halo profile, or a lightly doped profile. 
     
     
         18 . The method of  claim 16 , wherein performing the CMOS process is initiated by a processor integrated into an electronic device. 
     
     
         19 . The method of  claim 16 , wherein forming the first RF device comprises:
 forming a first gate oxide in a first region and in a second region of a wafer, the first gate oxide having a first thickness; and   forming first gate material in the first region.   
     
     
         20 . The method of  claim 19 , wherein forming the second RF device comprises:
 performing first processing to form a second gate oxide in the second region, the second gate oxide having a second thickness that is less than the first thickness; and   forming second gate material of in the second region.