Semiconductor device and a method of manufacturing the same

Abstract

A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.

1 - 18 . (canceled) 
     
     
         19 . A method of manufacturing a semiconductor device comprising steps of:
 (a) forming a first wiring over a semiconductor substrate;   (b) forming a first insulating film over the first wiring;   (c) forming a pad over the first insulating film, wherein a thickness of the pad is larger than a thickness of the first wiring;   (d) forming a second insulating film over the pad and the first insulating film such that the second insulating film covers a top surface of the pad and side surfaces of the pad;   (e) polishing the second insulating film by a CMP method;   (f) after the step (e), forming a third insulating film over the second insulating film, wherein a material of the third insulating film is different from a material of the second insulating film;   (g) forming an opening which reaches the pad, by etching the second and third insulating films; and   (h) forming a bump electrode which is electrically connected to the pad, over the pad and the third insulating film.   
     
     
         20 . A method of manufacturing a semiconductor device according the  claim 19 , wherein the second insulating film includes a silicon oxide film. 
     
     
         21 . A method of manufacturing a semiconductor device according the  claim 20 , wherein the third insulating film includes a silicon nitride film. 
     
     
         22 . A method of manufacturing a semiconductor device according the  claim 19 , wherein the bump electrode includes an under bump metal film and a metal film having larger thickness than the under bump metal film, and
 wherein the under bump metal film is formed between the metal film and the pad inside the opening, and is formed between the metal film and the third insulating film outside the opening.   
     
     
         23 . A method of manufacturing a semiconductor device according the  claim 22 , wherein the under bump metal film is a single layer film or laminated film, the under bump metal film including one or more of titanium film, nickel film, palladium film, titanium-tungsten alloy film, titanium nitride film and/or gold film. 
     
     
         24 . A method of manufacturing a semiconductor device comprising steps of:
 (a) forming a first wiring layer over a semiconductor substrate;   (b) forming a first insulating film over the first wiring layer;   (c) forming a top wiring layer including a pad over the first insulating film;   (d) forming a surface protection film over the top wiring layer and the first insulating film;   (e) forming an opening which reaches the pad, by etching the surface protection film; and   (h) forming a bump electrode over the pad such that the bump electrode is electrically connected to the pad and a top surface of the bump electrode is located over a top surface of the surface protection film,   wherein the surface protection film includes a first film and a second film formed over the first film,   wherein the first film includes silicon and oxygen,   wherein the second film includes silicon and nitrogen and is formed of a different material from the first film, and   wherein a top surface of the first film is located over a top surface of the pad and is flattened by a polishing treatment.   
     
     
         25 . A method of manufacturing a semiconductor device according the  claim 24 , wherein the first film is formed of a silicon oxide film. 
     
     
         26 . A method of manufacturing a semiconductor device according the  claim 25 , wherein the second film is formed of a silicon nitride film. 
     
     
         27 . A method of manufacturing a semiconductor device according the  claim 24 , wherein the bump electrode includes an under bump metal film and a metal film having larger thickness than the under bump metal film. 
     
     
         28 . A method of manufacturing a semiconductor device according the  claim 27 , wherein the under bump metal film is a single layer film or laminated film, the under bump metal film including one or more of titanium film, nickel film, palladium film, titanium-tungsten alloy film, titanium nitride film and/or gold film.