Combining cut mask lithography and conventional lithography to achieve sub-threshold pattern features
Abstract
Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of making a semiconductor device, comprising:
patterning a first portion of a feature and a second portion of the feature separated by a first predetermined distance; and patterning the first portion with a cut mask to form a first sub-portion and a second sub-portion, in which a dimension of the first sub-portion is less than the dimension of a second predetermined distance.
2 . The method of claim 1 , in which the first predetermined distance is one of a line tip to tip space and a line space.
3 . The method of claim 2 , in which the second predetermined distance is a line length resolution of a lithographic process having a specified width resolution.
4 . The method of claim 1 , further comprising depositing conductive material on the first sub-portion and the second sub-portion to form contact structures.
5 . The method of claim 1 , in which the feature is a local interconnect.
6 . The method of claim 1 , in which the first predetermined distance is a lithographic resolution of a first mask used to pattern the first portion and the second portion.
7 . The method of claim 6 , in which the second predetermined distance is the lithographic resolution of a second mask used to pattern the first sub-portion and the second sub-portion.
8 . The method of claim 1 , in which patterning the first portion with the cut mask further comprises etching the first portion into the first sub-portion and the second sub-portion.
9 . The method of claim 1 , further comprising integrating the semiconductor device into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
10 . A computer program product configured for making a semiconductor device, the computer program product comprising:
a non-transitory computer-readable medium having non-transitory program code recorded thereon, the non-transitory program code comprising:
program code to pattern a first portion of a feature and a second portion of the feature separated by a first predetermined distance; and
program code to pattern the first portion with a cut mask to form a first sub-portion and a second sub-portion in which a dimension of the first sub-portion is less than the dimension of a second predetermined distance.
11 . The computer program product of claim 10 , further comprising program code to deposit conductive material on the first sub-portion and the second sub-portion to form contact structures.
12 . The computer program product of claim 10 , in which the first predetermined distance is one of a line tip to tip space and a line space.
13 . The computer program product of claim 12 , in which the second predetermined distance is a line length resolution of a lithographic process having a specified width resolution.
14 . The computer program product of claim 10 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
15 . An apparatus for making a semiconductor device, comprising:
means for patterning a first portion of a feature and a second portion of the feature separated by a first predetermined distance; and means for patterning the first portion to form a first sub-portion and a second sub-portion, in which a dimension of the first sub-portion is less than the dimension of a second predetermined distance.
16 . The apparatus of claim 15 , in which the first predetermined distance is one of a line tip to tip space and a line space.
17 . The apparatus of claim 16 , in which the second predetermined distance is a line length resolution of a lithographic process having a specified width resolution.
18 . The apparatus of claim 15 , further comprising means for depositing conductive material on the first sub-portion and the second sub-portion to form contact structures.
19 . The apparatus of claim 15 , in which the feature is a local interconnect.
20 . The apparatus of claim 15 , in which the first predetermined distance is a lithographic resolution of a first mask used to pattern the first portion and the second portion.
21 . The apparatus of claim 20 , in which the second predetermined distance is the lithographic resolution of a second mask used to pattern the first sub-portion and the second sub-portion.
22 . The apparatus of claim 15 , in which means for patterning the first portion further comprises means for etching the first portion into the first sub-portion and the second sub-portion.
23 . The apparatus of claim 15 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.Join the waitlist — get patent alerts
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