US2016126137A1PendingUtilityA1

Combining cut mask lithography and conventional lithography to achieve sub-threshold pattern features

Assignee: QUALCOMM INCPriority: Apr 17, 2013Filed: Jan 11, 2016Published: May 5, 2016
Est. expiryApr 17, 2033(~6.7 yrs left)· nominal 20-yr term from priority
H10P 14/60H10D 64/01326H10P 14/40H10W 72/30H10W 72/013H10W 20/067H10W 72/00H10W 20/0698H10W 20/068H01L 21/76895H01L 21/76894G03F 7/70466G03F 7/7045
47
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Claims

Abstract

Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of making a semiconductor device, comprising:
 patterning a first portion of a feature and a second portion of the feature separated by a first predetermined distance; and   patterning the first portion with a cut mask to form a first sub-portion and a second sub-portion, in which a dimension of the first sub-portion is less than the dimension of a second predetermined distance.   
     
     
         2 . The method of  claim 1 , in which the first predetermined distance is one of a line tip to tip space and a line space. 
     
     
         3 . The method of  claim 2 , in which the second predetermined distance is a line length resolution of a lithographic process having a specified width resolution. 
     
     
         4 . The method of  claim 1 , further comprising depositing conductive material on the first sub-portion and the second sub-portion to form contact structures. 
     
     
         5 . The method of  claim 1 , in which the feature is a local interconnect. 
     
     
         6 . The method of  claim 1 , in which the first predetermined distance is a lithographic resolution of a first mask used to pattern the first portion and the second portion. 
     
     
         7 . The method of  claim 6 , in which the second predetermined distance is the lithographic resolution of a second mask used to pattern the first sub-portion and the second sub-portion. 
     
     
         8 . The method of  claim 1 , in which patterning the first portion with the cut mask further comprises etching the first portion into the first sub-portion and the second sub-portion. 
     
     
         9 . The method of  claim 1 , further comprising integrating the semiconductor device into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. 
     
     
         10 . A computer program product configured for making a semiconductor device, the computer program product comprising:
 a non-transitory computer-readable medium having non-transitory program code recorded thereon, the non-transitory program code comprising:
 program code to pattern a first portion of a feature and a second portion of the feature separated by a first predetermined distance; and 
 program code to pattern the first portion with a cut mask to form a first sub-portion and a second sub-portion in which a dimension of the first sub-portion is less than the dimension of a second predetermined distance. 
   
     
     
         11 . The computer program product of  claim 10 , further comprising program code to deposit conductive material on the first sub-portion and the second sub-portion to form contact structures. 
     
     
         12 . The computer program product of  claim 10 , in which the first predetermined distance is one of a line tip to tip space and a line space. 
     
     
         13 . The computer program product of  claim 12 , in which the second predetermined distance is a line length resolution of a lithographic process having a specified width resolution. 
     
     
         14 . The computer program product of  claim 10 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit. 
     
     
         15 . An apparatus for making a semiconductor device, comprising:
 means for patterning a first portion of a feature and a second portion of the feature separated by a first predetermined distance; and   means for patterning the first portion to form a first sub-portion and a second sub-portion, in which a dimension of the first sub-portion is less than the dimension of a second predetermined distance.   
     
     
         16 . The apparatus of  claim 15 , in which the first predetermined distance is one of a line tip to tip space and a line space. 
     
     
         17 . The apparatus of  claim 16 , in which the second predetermined distance is a line length resolution of a lithographic process having a specified width resolution. 
     
     
         18 . The apparatus of  claim 15 , further comprising means for depositing conductive material on the first sub-portion and the second sub-portion to form contact structures. 
     
     
         19 . The apparatus of  claim 15 , in which the feature is a local interconnect. 
     
     
         20 . The apparatus of  claim 15 , in which the first predetermined distance is a lithographic resolution of a first mask used to pattern the first portion and the second portion. 
     
     
         21 . The apparatus of  claim 20 , in which the second predetermined distance is the lithographic resolution of a second mask used to pattern the first sub-portion and the second sub-portion. 
     
     
         22 . The apparatus of  claim 15 , in which means for patterning the first portion further comprises means for etching the first portion into the first sub-portion and the second sub-portion. 
     
     
         23 . The apparatus of  claim 15 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

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