Pattern formation methods

Abstract

Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

What is claimed is: 
     
         1 . A pattern formation method, comprising:
 (a) providing a semiconductor substrate comprising one or more layers to be patterned;   (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent;   (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition;   (d) exposing the photoresist layer to activating radiation;   (e) heating the substrate in a post-exposure bake process; and   (f) developing the exposed film with an organic solvent developer.   
     
     
         2 . The method of  claim 1 , wherein the additive polymer comprises a unit containing a silicon atom. 
     
     
         3 . The method of  claim 1 , wherein the additive polymer comprises a unit containing a fluorine atom. 
     
     
         4 . The method of  claim 3 , wherein the additive polymer comprises a unit containing a fluoroalcohol. 
     
     
         5 . The method of  claim 1 , wherein the matrix polymer comprises a unit formed from a monomer of the following general formula (I): 
       
         
           
           
               
               
           
         
       
       wherein: R 1  is chosen from hydrogen and optionally substituted C1 to C3 alkyl; R 2  is chosen from optionally substituted C1 to C15 alkyl; X 1  is oxygen, sulfur or is represented by the formula NR 3 , wherein R 3  is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and Z 1  is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR 4 — wherein R 4  is chosen from hydrogen and optionally substituted C1 to C10 alkyl. 
     
     
         6 . The method of  claim 1 , wherein the additive polymer is formed from a monomer having the following general formula (II) or (III): 
       
         
           
           
               
               
           
         
       
       wherein: R 10  is chosen from hydrogen and optionally substituted C1 to C3 alkyl; R 11  is chosen from optionally substituted C1 to C15 alkyl; X 2  is oxygen, sulfur or is represented by the formula NR 12 , wherein R 12  is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and Z 3  is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —NHSO 2 —, —COO— and —CONR 13 — wherein R 13  is chosen from hydrogen and optionally substituted C1 to C10 alkyl; 
       
         
           
           
               
               
           
         
       
       wherein: R 14  is chosen from hydrogen and optionally substituted C1 to C3 alkyl; R 15  is independently chosen from optionally substituted C1 to C15 alkyl; X 3  is oxygen, sulfur or is represented by the formula NR 16 , wherein R 16  is chosen from hydrogen and optionally substituted C1 to C10 alkyl; Z 4  is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR 17 —, wherein R 17  is chosen from hydrogen and optionally substituted C1 to C10 alkyl; and n is an integer from 0 to 2. 
     
     
         7 . The method of  claim 1 , wherein the basic quencher comprises a basic moiety on the matrix polymer. 
     
     
         8 . The method of  claim 1 , wherein the basic quencher comprises an additive separate from the matrix polymer. 
     
     
         9 . The method of  claim 1 , wherein the additive polymer is present in the overcoat composition in an amount of from 3 to 15 wt % based on total solids of the overcoat composition. 
     
     
         10 . The method of  claim 1 , wherein the photoresist layer is exposed to the activating radiation in an immersion lithography process.