Silicon wafer polishing composition
Abstract
This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.
Claims
exact text as granted — not AI-modified1 . A silicon wafer polishing composition used in the presence of an abrasive, the composition comprising a silicon wafer polishing accelerator, an amide group-containing polymer, and water, wherein
the amide group-containing polymer has a building unit A in its main chain, the building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group, and the secondary amide group or tertiary amide group has a carbonyl carbon directly coupled to the main chain carbon atom.
2 . The silicon wafer polishing composition according to claim 1 , wherein the building unit A is derived from at least one species selected from a group consisting of monomers represented by the next general formula (1):
(in the formula, R 1 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; R 2 and R 3 are identical or different, with each being a hydrogen atom, an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 18 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which except for the hydrogen atom including a species having a substituent while this is not applicable when each of R 2 and R 3 is a hydrogen atom);
monomers represented by the next general formula (2):
(in the formula, R 4 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; and X is (CH 2 )n (n is an integer between 4 and 6), (CH 2 ) 2 O(CH 2 ) 2 or (CH 2 ) 2 S(CH 2 ) 2 ); and
monomers represented by the next general formula (3):
(R 5 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; R 6 and R 7 are identical or different, with each being a hydrogen atom, an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 8 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which except for the hydrogen atom including a species having a substituent; and a is an integer between 1 and 5).
3 . The silicon wafer polishing composition according to claim 1 , wherein the amide group-containing polymer is nonionic.
4 . The silicon wafer polishing composition according to claim 1 , wherein the abrasive is silica grains.
5 . A rinse composition for silicon wafers, the composition comprising a silicon wafer polishing accelerator, an amide group-containing polymer, and water, wherein
the amide group-containing polymer has a building unit A in its main chain, the building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group, and a carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.Join the waitlist — get patent alerts
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