US2016122591A1PendingUtilityA1

Silicon wafer polishing composition

Assignee: FUJIMI INCPriority: Jun 7, 2013Filed: May 2, 2014Published: May 5, 2016
Est. expiryJun 7, 2033(~6.9 yrs left)· nominal 20-yr term from priority
H10P 90/129H10P 70/15C09K 3/1436B24B 37/044B24B 37/00C09K 3/1463C09G 1/02
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Claims

Abstract

This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

Claims

exact text as granted — not AI-modified
1 . A silicon wafer polishing composition used in the presence of an abrasive, the composition comprising a silicon wafer polishing accelerator, an amide group-containing polymer, and water, wherein
 the amide group-containing polymer has a building unit A in its main chain,   the building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group, and   the secondary amide group or tertiary amide group has a carbonyl carbon directly coupled to the main chain carbon atom.   
     
     
         2 . The silicon wafer polishing composition according to  claim 1 , wherein the building unit A is derived from at least one species selected from a group consisting of monomers represented by the next general formula (1): 
       
         
           
           
               
               
           
         
         (in the formula, R 1  is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; R 2  and R 3  are identical or different, with each being a hydrogen atom, an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 18 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which except for the hydrogen atom including a species having a substituent while this is not applicable when each of R 2  and R 3  is a hydrogen atom);
 monomers represented by the next general formula (2): 
 
       
       
         
           
           
               
               
           
         
         (in the formula, R 4  is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; and X is (CH 2 )n (n is an integer between 4 and 6), (CH 2 ) 2 O(CH 2 ) 2  or (CH 2 ) 2 S(CH 2 ) 2 ); and
 monomers represented by the next general formula (3): 
 
       
       
         
           
           
               
               
           
         
         (R 5  is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; R 6  and R 7  are identical or different, with each being a hydrogen atom, an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 8 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which except for the hydrogen atom including a species having a substituent; and a is an integer between 1 and 5). 
       
     
     
         3 . The silicon wafer polishing composition according to  claim 1 , wherein the amide group-containing polymer is nonionic. 
     
     
         4 . The silicon wafer polishing composition according to  claim 1 , wherein the abrasive is silica grains. 
     
     
         5 . A rinse composition for silicon wafers, the composition comprising a silicon wafer polishing accelerator, an amide group-containing polymer, and water, wherein
 the amide group-containing polymer has a building unit A in its main chain,   the building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group, and   a carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

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